(Pb,la)(zr,sn,ti)o-3 Antiferroelectric Thin Films Grown on Lanio3-Buffered and Pt-Buffered Silicon Substrates by Sol-Gel Processing

X Li,JW Zhai,HD Chen
DOI: https://doi.org/10.1063/1.1834730
IF: 2.877
2004-01-01
Journal of Applied Physics
Abstract:Antiferroelectric (Pb,La)(Zr,Sn,Ti)O3 thin films have been fabricated on LaNiO3∕Pt∕Ti∕SiO2∕Si and Pt∕Ti∕SiO2∕Si substrates by a sol-gel processing technique. The films grown on LaNiO3-buffered silicon substrates showed a dense columnar microstructure and were highly (100)-oriented while those grown on Pt-buffered silicon substrates showed an equiaxed microstructure without any obvious preferred orientation. The relationship between the orientation of films and the saturation polarization was studied. The phase switching field and the dielectric constant were investigated as a function of film thickness.
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