Effects of buffer layers on the orientation and dielectric properties of Ba(Zr0.20Ti0.80)O3 thin films prepared by sol–gel method
L.N. Gao,S.N. Song,J.W. Zhai,X. Yao,Z.K. Xu
DOI: https://doi.org/10.1016/j.jcrysgro.2007.12.015
IF: 1.8
2008-01-01
Journal of Crystal Growth
Abstract:Ba(Zr0.20Ti0.80)O3 (BZT) thin films were deposited on Pt(111)/Ti/SiO2/Si(100), LaNiO3 (LNO) and CeO2-buffered Pt(111)/Ti/SiO2/Si(100) substrates by sol–gel process. The BZT thin films directly grown on Pt(111)/Ti/SiO2/Si(100) substrates exhibited highly (111) preferred orientation, while the films deposited on Pt(111)/Ti/SiO2/Si(100) substrates with LNO and CeO2 buffer layers showed, respectively, highly (100) and (110) preferred orientation. At 1MHz, the dielectric constants were 416, 465 and 245 for the BZT thin films grown on Pt(111)/Ti/SiO2/Si(100), LNO and CeO2-buffered Pt(111)/Ti/SiO2/Si(100) substrates, respectively. The difference in dielectric properties of these three kinds of BZT films may be attributed to the different grain sizes and various orientations.