Dielectric Tunable Properties and Relaxor Behavior of (pb0.5ba0.5)zro3 Thin Films

Xihong Hao,Jiwei Zhai,Xi Yao
DOI: https://doi.org/10.1111/j.1551-2916.2008.02761.x
IF: 4.186
2008-01-01
Journal of the American Ceramic Society
Abstract:Pb0.5Ba0.5ZrO3 (PBZ50) thin films with a thickness of about 500 nm in the paraelectric‐phase were deposited on Pt/Ti/SiO2/Si substrates via the sol–gel process. The room‐temperature dielectric measurements showed that the tunability and figure of merit (FOM) of the PBZ50 films at the maximum external DC field of 200 kV/cm were 39% and 38%, respectively. The results of temperature‐dependent dielectric measurements confirmed that PBZ50 films had a typical diffuse phase transition characteristic and relaxor behavior.
What problem does this paper attempt to address?