Ferroelectric-Relaxor Behavior of Highly Epitaxial Barium Zirconium Titanate Thin Films

Madhuparna Pal,Ming Liu,C. R. Ma,C. L. Chen,R. Guo,A. Bhalla
DOI: https://doi.org/10.4028/www.scientific.net/jnanor.34.67
2015-01-01
Journal of Nano Research
Abstract:Ferroelectric-relaxor behavior on highly epitaxial Barium Zirconium Titanate (Ba (Zr0.2Ti0.8)O3) thin film was investigated using the Piezoresponse Force Microscopy specifically to investigate the onset of relaxor behavior. The surface roughness, microstructure and the grain size of the film were systematically studied. Ferroelectric switching at random localized points were observed at room temperature though it has been previously reported that the phase transition in BZT-20 occurs at 285K. Phase reversal with the reversal of the applied voltage was also seen. Scanning Capacitance Microscope has been employed to interrogate the localized change in the capacitance with change in voltage. The thin film sample showed the presence of ferroelectric nanoregions at room temperature unlike its bulk counterparts which is paraelectric at room temperature.
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