High Epitaxial Ferroelectric Relaxor Mn-Doped Ba(Zr, Ti)O-3 Thin Films on Mgo Substrates

J. C. Jiang
DOI: https://doi.org/10.1142/s2010135x11000562
2011-01-01
Journal of Advanced Dielectrics
Abstract:Environment friendly ferroelectric relaxor Ba ( Zr 0.2 Ti 0.8) O 3 thin films with the addition of 2% Mn dopant were grown on (001) MgO substrates by pulsed laser deposition. Microstructure studies with X-ray diffraction and transmission electron microscopy reveal that the as-grown Ba ( Zr 0.2 Ti 0.8) O 3 thin films are c-axis oriented with an atomic sharp interface. The films have good single crystallinity and good epitaxial quality. The interface relationship was determined to be [100]Mn:BZT//[100]MgO and (001)Mn:BZT//(001)MgO . Nanoscale order/disorder relaxor structures were found with nano-columnar structures. The microwave dielectric measurements (15–18 GHz) indicate that the films have excellent dielectric properties with large dielectric constant value, high tunability, and low dielectric loss, promising the development of room temperature tunable microwave elements.
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