Abstract:The electromagnetic properties at the interface of heterostructure are sensitive to the interfacial crystal structure and external field. For example, the two-dimensional magnetic states at the interface of LaAlO3/SrTiO3 are discovered and can further be controlled by electric field. Here, we study two types of heterostructures, TiO2/PbTiO3 and SrTiO3/PbTiO3, using first-principle electronic structure calculations. We find that the ferroelectric polarization discontinuity at the interface leads to partially occupied Ti 3d states and the magnetic moments. The magnitude of the magnetic moments and the ground-state magnetic coupling are sensitive to the polarization intensity of PbTiO3. As the ferroelectric polarization of PbTiO3 increases, the two heterostructures show different magnetic ordering that strongly depends on the electron occupation of the Ti t2g orbitals. For the TiO2/PbTiO3 interface, the magnetic moments are mostly contributed by degenerated d yz/d xz orbitals of interfacial Ti atoms and the neighboring interfacial Ti atoms form ferromagnetic coupling. For SrTiO3/PbTiO3 interface, the interfacial magnetic moments are mainly contributed by occupied d xy orbital because of the increased polarization intensity, and as the electron occupation increases, there exists a transition of the magnetic coupling between neighboring Ti atoms from ferromagnetism to antiferromagnetism via the superexchange interaction. Our study suggests that manipulating the polarization intensity is one effective way to control interfacial magnetic ordering in the perovskite oxide heterostructures.

Enhanced Dielectric Properties of (Ba,sr)tio3//ba(zr,ti)o-3 Heterostructures with Optimized Structure Design

Microwave Dielectric Properties of Mn-doped (ba,sr)tio3//ba(zr,ti)o3 Multilayered Thin Films: Optimization of Designed Structure

Interface engineered BaTiO₃/SrTiO₃ heterostructures with optimized high-frequency dielectric properties

Large Dielectric Tunability and Microwave Properties of Mn-doped (ba,sr)tio3 Thin Films

Microwave Dielectric Properties of Epitaxial Mn-Doped Ba(Zr,Ti)O-3 Thin Films on Laalo3 Substrates

Microwave dielectric properties with optimized Mn-doped Ba 0.6Sr0.4TiO3 highly epitaxial thin films

Ferroelectric BaTiO3/SrTiO3 Multilayered Thin Films for Room-Temperature Tunable Microwave Elements.

Bi 1.5 Zn 1.0 Nb 1.5 O 7 ∕ Mn -Doped Ba0.6Sr0.4TiO3 Heterolayered Thin Films with Enhanced Tunable Performance

Enhanced Piezoresponse and Dielectric Properties for Ba1-XSrXTiO3 Composition Ultrathin Films by the High-Throughput Method

Ferroelectric Domain Structure Evolution In Ba(Zr0.1ti0.9)O-3/(Ba0.75ca0.25)Tio3 Heterostructures

Dielectric properties of Ba0.6Sr0.4TiO3-La(B0.5Ti0.5)O3 (B=Mg, Zn) ceramics

Ultra-high resistive switching current ratio and improved ferroelectricity and dielectric tunability performance in a BaTiO3/La0.7Sr0.3MnO3 heterostructure by inserting a SrCoO2.5 layer

Enhancement of ferroelectric polarization in layered BaZrO 3 /BaTiO 3 superlattices

Tuning Interfacial Magnetic Ordering Via Polarization Control in Ferroelectric SrTiO3/PbTiO3 Heterostructure.

Sintering Behavior and Dielectric Property of BST-BSL Composite Ceramics

Structural, Dielectric, and Ferroelectric Properties of a BiFeO3/Sr0.5Ba0.5Nb2O6/Pt(001)/MgO(001) Heterostructure

Manipulation of phase transitions and electrical properties of Ba<sub>1-x</sub>Sr<sub>x</sub>TiO<sub>3</sub> thin films through orientation engineering

Recent Progress of (ba,sr)tio 3 Thin Films for Tunable Microwave Devices

Dielectric Tunability Properties in (110)-Oriented Epitaxial 0.5Ba(Ti0.8Zr0.2)O3-0.5(Ba0.7Ca0.3)TiO3 Thin Films Prepared by PLD Method

Interface Structures and Epitaxial Behavior of Ferroelectric (ba,sr)tio3 Thin Films

Ferroelectric Properties of (ba0.5sr0.5)tio3/pb(zr0.52ti0.48)o3/ (ba0.5sr0.5)tio3 Thin Films with Platinum Electrodes