Microwave Dielectric Properties of Epitaxial Mn-Doped Ba(Zr,Ti)O-3 Thin Films on Laalo3 Substrates

Ming Liu,Chunrui Ma,Jian Liu,Gregory Collins,Chonglin Chen,Andy D. Alemayehu,Guru Subramanyam,Chao Dai,Yuan Lin,Amar Bhalla
DOI: https://doi.org/10.1080/07315171.2013.814487
2013-01-01
Ferroelectrics Letters Section
Abstract:Environmental friendly ferroelectric relaxor Ba(Zr0.2Ti0.8)O-3 thin films with an additional 2% Mn dopant were epitaxially fabricated on the (001) LaAlO3 single crystal substrates by pulsed laser deposition. Microstructure characterizations from x-ray diffraction suggest that the films are c-axis oriented with the interface relationship of [101](Mn:BZT)//[100](LAO) and (001)(Mn:BZT) //(001)(LAO). The microwave dielectric property measurements (13-17.5GHz) reveal that the films have excellent dielectric properties with large tunability, high dielectric constant, and low dielectric loss, which the average value is 25.9%, 169 and 0.054, respectively. It is indicated that the additional 2% Mn doped Ba(Zr0.2Ti0.8)O-3 thin films can be used for the development of the room temperature tunable microwave elements and related device applications.
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