Epitaxial Ferroelectric Ba0.5Sr0.5TiO3 Thin Films for Room-Temperature Tunable Element Applications

CL Chen,HH Feng,Z Zhang,A Brazdeikis,ZJ Huang,WK Chu,CW Chu,FA Miranda,FW Van Keuls,RR Romanofsky,Y Liou

DOI: https://doi.org/10.1063/1.124392

IF: 4

1999-01-01

Applied Physics Letters

Abstract:Perovskite Ba0.5Sr0.5TiO3 thin films have been synthesized on (001) LaAlO3 substrates by pulsed laser ablation. Extensive x-ray diffraction, rocking curve, and pole-figure studies suggest that the films are c-axis oriented and exhibit good in-plane relationship of 〈100〉BSTO//〈100〉LAO. Rutherford backscattering spectrometry studies indicate that the epitaxial films have excellent crystalline quality with an ion beam minimum yield χmin of only 2.6%. The dielectric property measurements by the interdigital technique at 1 MHz show room-temperature values of the relative dielectric constant, εr, and loss tangent, tan δ, of 1430 and 0.007 with no bias, and 960 and 0.001 with 35 V bias, respectively. The obtained data suggest that the as-grown Ba0.5Sr0.5TiO3 films can be used for development of room-temperature tunable microwave elements.