PREPARATION AND DIELECTRIC PROPERTIES OF Ba(ZrxTi1−x)O3 THIN FILMS GROWN BY A SOL-GEL PROCESS

Gao Cheng,Jiwei Zhai,Xi Yao
DOI: https://doi.org/10.1080/10584580500414119
2005-01-01
Integrated Ferroelectrics
Abstract:ABSTRACT Barium zirconium titanate Ba(ZrxTi1 - x)O3 (BZT, x = 0.05, 0.15, 0.2, 0.25, 0.3) thin films have been prepared on Pt/Ti/SiO2/Si substrates by sol-gel process. All films crystallized in the perovskite structure with a crack free microstructure. Dielectric properties of thin films have been investigated as a function of frequency and direct current electric field. The results show that thin films current leakage decrease with increasing Zr content. High tunability is obtained in BZT thin films, which imply that BZT thin films are promising materials for tunable microwave applications.
What problem does this paper attempt to address?