Ferroelectric Properties of Bi4Zr0.5Ti2.5O12 Thin Films Prepared on LaNiO3 Bottom Electrode by Sol-Gel Method

Guo DongYun,Li MeiYa,Liu Jun,Pei Ling,Yu BenFang,Zhao XingZhong,Yang Bin,Wang YunBo,Yu Jun

DOI: https://doi.org/10.1007/s11431-007-0033-1

2007-01-01

Science China Technological Sciences

Abstract:The Bi 4 Zr 0.5 Ti 2.5 O 12 (BZT) thin films were fabricated on the LaNiO 3 bottom electrode using sol-gel method. The structure and morphology of the films were characterized using X-ray diffraction, AFM and SEM. The results show that the films have a perovskite phase and dense microstructure. The 2 P r and 2 V c of the Pt/BZT/LaNiO 3 capacitor are 28.2 μC/cm 2 and 14.7 V respectively at an applied voltage of 25 V. After the switching of 1×10 10 cycles, the P r value decreases to 87% of its pre-fatigue values. The dielectric constant (ɛ) and the dissipation factor (tanδ) of the BZT thin films are about 204 and 0.029 at 1 kHz, respectively. The films show good insulating behavior according to the test of leakage current. The clockwise C-V hysteresis curve observed shows that the Pt/BZT/LaNiO 3 structure has a memory effect because of the BZT film’s ferroelectric polarization.