Structural and Electrical Properties of (bi,la)4ti3o12 Thin Films with a Bi2O3 Top-Layer Prepared by a Chemical Solution Deposition Method

DH Bao,N Wakiya,K Shinozaki,N Mizutani
DOI: https://doi.org/10.4028/www.scientific.net/kem.248.45
2002-01-01
Abstract:Fatigue-free ferroelectric (Bi,La)(4)Ti3O12 (BLT) thin films with a Bi2O3 top-layer were prepared on Pt/Ti/SiO2/Si substrates by a chemical solution deposition method. The BLT films with a thin Bi2O3 top-layer and those without a Bi2O3 layer had a highly c-axis oriented growth. It was found that the use of Bi2O3 top-layer improved significantly the ferroelectric properties of BLT thin films. The remanent polarization (2P(r)) and coercive field (E-c) values of BLT films without a Bi2O3 layer and those with a Bi2O3 top-layer annealed at 750 degreesC were 10.8 and 29.12 muC/cm(2), 79.0 and 74.5 kV/cm at an applied electric field of 350 kV/cm, respectively. The capacitor with Bi2O3 top-layer showed good fatigue-free polarization characteristics and retention properties.
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