Bi<sub>4-x</sub>La<sub>x</sub>Ti<sub>3</sub>O<sub>12</sub> Ferroelectric Thin Films Prepared by RF Magnetron Sputtering

Xing Ao Li,Zu Li Liu,An You Zuo,Zuo Bin Yuan,Jian Yang,Kai Yao
DOI: https://doi.org/10.4028/www.scientific.net/kem.368-372.109
2008-01-01
Key Engineering Materials
Abstract:Bi4-xLaxTi3O12 (BLT) ferroelectric thin films were deposited on Pt/Si substrates by RF magnetron sputtering with Bi4-xLaxTi3O12 (x=0.5, 0.75, 1) targets with 50-mm diameter and 5-mm thickness. The effects of La contents on microstructure and ferroelectric properties of Bi4-xLaxTi3O12 thin films were investigated. The grain growth behavior and ferroelectric properties such as remanent polarization were found to be dependent on the La contents in the BLT thin films.
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