Abstract:Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thin films with thickness of 500nm were successfully deposited on TiO2 buffered Pt(111)/Ti/SiO2/Si(100) and Pt(111)/Ti/SiO2/Si(100) substrates via sol–gel process. Microstructure of Pb0.97La0.02(Zr0.95Ti0.05)O3 thin films was studied by X-ray diffraction analyses. The antiferroelectric nature of the Pb0.97La0.02(Zr0.95Ti0.05)O3 thin films was confirmed by the double hysteresis behaviors of polarization and double buffer fly response of dielectric constant versus applied voltage at room temperature. The capacitance–voltage behaviors of the Pb0.97La0.02(Zr0.95Ti0.05)O3 films with and without TiO2 buffer layer were studied, as a function of temperature. The temperature dependence of dielectric constant displayed a similar behavior and the Curie temperature (Tc) was 193°C for films on both substrates. The current caused by the polarization and depolarization of polar in the Pb0.97La0.02(Zr0.95Ti0.05)O3 films was detected by current density–electric field measurement.

Temperature And Frequency Dependence Of Dielectric Properties Of (Pb, La)(Zr, Sn, Ti)O-3 Antiferroelectric Thin Films On Lanio3 Bottom Electrode With Different Sheet Resistance

The electrical properties and phase transformation of PLZST 2/85/13/2 antiferroelectric thin films on different bottom electrode

Metal-organic Chemical Liquid Deposited (110)-Preferred LaNiO3 Buffer Layer for Pb0.97La0.02(Zr0.85Sn0.13Ti0.02)O3 Antiferroelectric Films

Improved Dielectric Properties of (110)-Preferred (pb, La) (zr, Sn, Ti)O-3 Antiferroelectric Thin Films on Metalorganic Decomposition-Derived Lanio3 Buffer Layer

Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O 3 and Pb (Nb,Zr,Sn,Ti)O 3 antiferroelectric thin films deposited on LaNiO 3 -buffered silicon substrates by sol-gel processing

Electrical properties of Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thin films on TiO2 buffer layer

Dielectric Properties of Pb<sub>0.97</sub>La<sub>0.02</sub>(Zr<sub>0.87−<i>x</i></sub>Sn<sub><i>x</i></sub>Ti<sub>0.13</sub>)O<sub>3</sub>Thin Films with Compositions near the Morphotropic Phase Boundary

Composition-Dependent Electrical Properties of (pb, La)(Zr, Sn, Ti)O-3 Antiferroelectric Thin Films Grown on Platinum-Buffered Silicon Substrates

Thickness and frequency dependence of electric-field-induced strains of sol-gel derived (Pb 0.97 La 0.02 )(Zr 0.95 Ti 0.05 )O 3 antiferroelectric films

Preparation of Plzt Antiferroelectric Thin Films on Zro2 Buffered Substrates

(Pb,la)(zr,sn,ti)o-3 Antiferroelectric Thin Films Grown on Lanio3-Buffered and Pt-Buffered Silicon Substrates by Sol-Gel Processing

Low-temperature growth of (110)-preferred Pb0.97La0.02(Zr0.88Sn0.10Ti0.02)O3 antiferroelectric thin films on LaNiO3/Si substrate

Preparation of Highly (111)-Oriented (Pb,la)(zr,sn,ti)o-3 (plzst) Antiferroelectric Thin Films by Modified Sol-Gel Process Using A Novel Tin Source, Dibutyloxide of Tin

Electric Fatigue In Pb(Nb,Zr,Sn,Ti)O-3 Thin Films Grown By A Sol-Gel Process

Dielectric and Ferroelectric Properties of Highly Oriented (Pb,nb)(zr,sn,ti)o-3 Thin Films Grown by A Sol-Gel Process

Influence of different bottom electrodes to microstructure and electrical properties of Pb(Zr0.52Ti0.48)O3 ferroelectric films

Effects of Thickness on Energy Storage of (pb, La)(Zr, Sn, Ti)O 3 Antiferroelectric Films Deposited on LaNiO 3 Electrodes

Dielectric Properties Of Pb0.97la0.02(Zr0.87-Xsnxti0.13)O-3 Thin Films With Compositions Near The Morphotropic Phase Boundary

Dielectric and Ferroelectric Properties of Ba(Zr0.35Ti0.65)O3 Thin Films Grown by a Sol-Gel Process

Effect of the Orientation on the Ferroelectric–antiferroelectric Behavior of Sol–gel Deposited (pb,nb)(zr,sn,ti)o3 Thin Films

Direct Current Field Adjustable Ferroelectric Behaviour in (pb, Nb)(Zr, Sn, Ti)O3antiferroelectric Thin Films