Abstract:The PbZr0.40Ti0.60O3 (PZT)/LaNiO3 (LNO) multilayer films with different associated thickness have been deposited on Pt/Ti/SiO2/Si substrates by a modified sol-gel technique. X-ray diffraction analysis shows that the PZT and LNO films are polycrystalline with the (100)-preferential orientation and perovskite phase. The optical properties of PZT films have been investigated using infrared spectroscopic ellipsometry (IRSE) in the photon frequency range of 800-4000 cm(-1) (2.5-12.5 mu m). By fitting the measured ellipsometric parameters with a four-phase layered model (air/PZT/LNO/Pt) and a derived classical dispersion relation, the optical function and thickness of the films have been uniquely extracted. The refractive index of the PZT films increases and the extinction coefficient decreases with increasing grain size in the mid-infrared region. Correspondingly, infrared absorption coefficient of the films linearly increases with increasing thickness. It can be concluded that the discrepancy of infrared optical properties is mainly ascribed to the crystalline quality, the grain size effect, and the influence from the interface layer. The present results can be crucial for future application of ferroelectric PZT-based infrared optoelectronic devices.

Structure and optical properties of ferroelectric PbZr 0.40Ti0.60O3 films grown on LaNiO 3-coated platinized silicon determined by infrared spectroscopic ellipsometry

Ferroelectricity In Pb(Zr0.5ti0.5)O-3 Thin Films: Critical Thickness And 180 Degrees Stripe Domains

The Microstructure and Ferroelectric Properties of PbZr0.52Ti0.48O3 Films on Mica Substrates

Characterization of Pb(Zr,Ti)O-3 Thin-Films on Soi Prepared by Excimer-Laser Deposition

Effect of LaNiO3 interlayer on electrical properties of Pb(Zr0.52Ti0.48)O3/LaNiO3/Pb(Zr0.52Ti0.48)O3 composite films

Pulsed Excimer Laser Deposition and Rapid Thermal Annealing of Ferroelectric Pb(Zr0.52Ti0.48)O3 Thin Films on Si-on-Insulator

Preparation of Pb(Zr0.52Ti484848)O3 Thin Films on Silicon-on-insulator Substrates by Excimer Laser Deposition Combined with Rapid Thermal Annealing

Preparation of Pb(Zr<sub>0.52</sub>Ti484848)O<sub>3</sub> thin films on silicon-on-insulator substrates by excimer laser deposition combined with rapid thermal annealing

Preparation of Pb(Zr0.52Ti0.48)O3 thin films on silicon-on-insulator substrates by excimer laser deposition combined with rapid thermal annealing

Pulsed Laser Deposition and Characterization of Ferroelectric Pb(Zr,Ti)O-3 Thin Films on Silicon-On-Insulator Substrates

Dielectric Properties of Oriented PbZrO3 Thin Films Grown by Sol-Gel Process

The structure and infrared absorption diagnostics of PZT thin films

Pulsed-Laser Deposition and Characterization of Optical Wave-Guiding (Pb,la)(zr,ti)o-3 Thin-Films

Composition-phase structure relationship and thickness-dependent ferroelectricity of rhombohedral phase in [1 1 1]-textured Nb-doped Pb(Zr,Ti)O3 thin films

Combined Effect of Preferential Orientation and Zr/Ti Atomic Ratio on Electrical Properties of Pb(ZrxTi1−x)O3 Thin Films

Study of silicon-based ferroelectric thin films prepared by Sol-Gel method

Epitaxial Pb(Zr0.53ti0.47)O-3/Lanio3 Heterostructures on Single Crystal Substrates

Microstructure and Electrical Properties of Ferroelectric Pb(Zr0.53Ti0.47)O3films on Si with TiO2buffer Layers

Growth of Highly C-Axis-oriented Pb(Zr0.53Ti0.47) O3 Thin Films on LaNiO3 Electrodes by Pulsed Laser Ablation

Pulsed Laser Deposition of PZT/LSCO Heterostructure for Integrated Ferroelectric Devices

Interface and Surface Characterization of Lead Zirconate Titanate Thin Films Grown by Sol–Gel Method