Low-temperature sintering and microwave dielectric properties of MgTiO 3 ceramics

Qi-Long Zhang,Hui Yang
DOI: https://doi.org/10.1007/s10854-006-9090-7
2006-01-01
Abstract:The effects of CuO–Bi 2 O 3 –V 2 O 5 additions on the sintering temperature and the microwave dielectric properties of MgTiO 3 ceramics were investigated systematically. The CuO–Bi 2 O 3 –V 2 O 5 (CuBiV) addition significantly lowered the densification temperature of MgTiO 3 ceramics from 1400 °C to about 900 °C, which is due to the formation of the liquid-phase of BiVO 4 and Cu 3 (VO 4 ) 2 during sintering. The saturated dielectric constant (ε r ) increased, the maximum quality factor (Qf) values decreased and the temperature coefficient of resonant frequency (τ f ) shifted to a negative value with the increasing CuBiV content, which is mainly attributed to the increase of the second phase BiVO 4 . MgTiO 3 ceramics with 6 wt.% CuBiV addition sintered at 900 °C for 2 h have the excellent microwave dielectric properties: ε r = 18.1, Qf = 20300 GHz and τ f = −57 ppm/ °C.
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