ITO/AIN/AI ohmic contact for p-GaN with high reliability and optical reflectivity

HongXia Ma,Yanjun Han,Yi Luo

DOI: https://doi.org/10.1109/INOW.2007.4302963

2007-01-01

Abstract:ITO/AIN/AI scheme is proposed as ohmic contact to p-GaN with high reliability and optical reflectivity. The LEDs with ITO/AIN/AI contact exhibited better thermal stability, electrical and optical performance than ITO/AI and Agbased ones. © 2007 IEEE.

What problem does this paper attempt to address?

Highly Reflective Ni/Ag/Pt/Au Ohmic Contacts To P-Gan With Ito Interlayer

Meng Liang,Xiao-Yan Yi,Zhi-Qiang Liu,Bing Wang,Qin-Feng Kong,Jun-Xi Wang,Jin-Min Li

2014-01-01

Abstract:In this work, a metal stack of Ni/Ag/Pt/Au with a 1nm-thick ITO (indium-tin-oxide) interlayer which formed highly reflective and ohmic contacts to p-GaN had been investigated. A strong interdiffusion of Ni/Ag/Pt/Au was observed when annealing over 500 degrees C for forming ohmic contact. As a result, the reflectance of Ni/Ag/Pt/Au contacts drastically decreased. A thin ITO layer grown between Ni/Ag/Pt/Au and p-GaN could lower the annealing temperature. And an optical reflectivity of 84% at 460nm was obtained after thermal annealing at 300 degrees C, while the specific contact resistance of ITO-Ni/Ag/Pt/Au contacts was found to be 2.16 x 10(-5) Omega . cm(2). In addition, the flip chip LEDs (light emitting diodes) fabricated with the ITO-Ni/Ag/Pt/Au contacts had a low voltage of 2.9V at 31A/cm(2).
GaInN Light-Emitting Diodes with Omni-Directional Reflector Using Nanoporous SnO2 Film

Changyu Shen,Huajun Feng,Zhihai Xu,Shangzhong Jin

DOI: https://doi.org/10.3788/col20080602.0152

IF: 2.56

2008-01-01

Chinese Optics Letters

Abstract:Enhancement of light extraction in a GaInN light-emitting diode (LED) employing an omni-directional reflector (ODR) consisting of GaN, SnO2 nanorod and an Ag layer was presented. The ODR comprises a transparent, quarterwave layer of SnO2 nanorod claded by silver and serves as an ohmic contact to p-type GaN. Transparent SnO2 sols were obtained by sol-gel method from SnCl 2H2O, and SnO2 thin films were prepared by dip-coating technique. The average size of the spherical SnO2 particles obtained is 200 nm. The refractive index of the nanorod SnO2 film layer is 2.01. The GaInN LEDs with GaN/SnO2/Ag ODR show a lower forward voltage. This was attributed to the enhanced reflectivity of the ODR that employs the nanorod SnO2 film layer. Experimental results show that ODR-LEDs have lower optical losses and higher extraction efficiency as compared to conventional LEDs with Ni/Au contacts and conventional LEDs employing a distributed Bragg reflector (DBR).
The Effect of p-InGaN layer on ITO based ohmic contacts to p-GaN

Han, Yanjun,Zhongtao Liu,Luo, Yi,Ma Hongxia,XianPeng Zhang,Lai Wang

DOI: https://doi.org/10.1109/INOW.2007.4302897

2007-01-01

Abstract:By epitaxy of a thin p-lnGaN layer on p-GaN surface and optimization of InGaN/GaN heterostructures annealing condition, ohmic contact to p-GaN with high transparency was obtained by using electron beam evaporated indium tin oxide film.
High-reflectance Ohmic Contacts to P-Gan of GaN-based Violet LEDs

ZHANG Jing-dong,YU Tong-jun,YANG Zhi-jian,YAN He-ping,ZHANG Ning,MU Sen,ZHANG Guo-yi

DOI: https://doi.org/10.3321/j.issn:1000-7032.2006.01.013

2006-01-01

Chinese Journal of Luminescence

Abstract:High-reflectance ohmic contacts to p-GaN are the key for Flip-chip ultra-violet light emitting diode (UV-LED) to improve the external quantum efficiency (EQE), so the kinds of metal or alloy film both ohmic contact and the reflector of light are important to choose the appropriate high-reflectance and low-resistance ohmic contact to p-type GaN. The GaN-based LED samples used were grown by Metalorganic Chemical Vapor Deposition (MOCVD). Four different metal films were deposited on the surfaces of p-GaN and annealed Ni/Au alloy. The thickness of these metal films varied from 30 nm to 840 nm. The reflectance and transmittance of the samples were mea- sured by WGS-9 system. The 2θ scans XRD and surface AFM images of the samples were also observed. As results, when the films' thickness under the 130 nm the reflectance of Ag-deposited samples increased with the increasing thickness and the transmittance decreased at wavelength of 400 nm. The reason of the increasing of reflectance is the reduction of the light transmitted through the films. When the films' thickness over 130 nm, the reflectance of Ag-deposited samples decreasing. From the results of XRD and AFM, the metal film formed multi-layers film and the roughness R_a and R_q increased with the increasing thickness. It is suggested that the diffusion of the multi-layers films is the main reason of reduction of reflectance with the films thickness increasing. Other metal films show the same characteristics as the Ag-deposited films. From the result of reflectance, Al and Ag are the suitable candidates for the reflector, but it is reported that the single Al or Ag films don't make good ohmic contacts on p-GaN. So a thin annealed Ni/Au is adopted to interspersed between the Al or Ag reflector and the p-GaN in order to provide efficient hole injection into the device. From the results of reflectance and I-V curves of Ni/Au/Ag and Ni/Au/Al, the I-V characteristics of Ni/Au/Ag and Ni/Au/Al contacts are similar to this of Ni/Au annealed. However the reflectance of Ni/Au/Ag and Ni/Au/Al contacts is three times higher than that of Ni/Au at wavelength of 400 nm. These results demonstrated that Ni/Au/Ag and Ni/Au/Al can be used as high-reflectance and low-resistance p-GaN ohmic contacts for flip-chip UV-LEDs
A Novel Ni/Ag/Pt Ohmic Contact to P-Type GaN for Flip-Chip Light-Emitting Diodes

Ma Hong-Xia,Han Yan-Jun,Shentu Wei-Jin,Zhang Xian-Peng,Luo Yi

DOI: https://doi.org/10.1088/0256-307x/23/8/092

2006-01-01

Abstract:We present a high-quality Ni/Ag/Pt Ohmic contact to p-type GaN. After the sample is annealed at 500°C in O2 ambient for 3 min, a specific contact resistance as low as 2.6×10−5 Ω.cm2 and an optical reflectivity of 82% at 460 nm are obtained. The Auger electron spectroscopy analysis shows that the Pt layer can improve the surface morphology and thermal reliability of the annealed Ag-based electrode, Ag plays a key role in achieving good ohmic contact due to the outdiffusion of Ga into Ag forming Ga vacancies which increase the hole concentration, while the surface contamination of p-type GaN is reduced by Ni.
Ohmic Contacts in GaN-based Devices

邵庆辉,叶志镇,黄靖云

DOI: https://doi.org/10.3321/j.issn:1005-023x.2003.03.011

2003-01-01

Abstract:Gallium nitride has become one of the most attractive materials for light emitting devices and high-temperature and high-power devices,due to its superior opto-electronic properties. Ohmic contact is a critical technology for preparing GaN based devices. In this paper,research progress in ohmic contacts in n-GaN and p-GaN is presented emphatically.
Ohmic Contact of High Reflectivity on P-Type GaN

KANG Xiang-ning,ZHANG Bei,HU Cheng-yu,WANG Qi,CHEN Zhi-zhong,ZHANG Guo-yi

DOI: https://doi.org/10.3321/j.issn:1000-7032.2006.01.014

2006-01-01

Chinese Journal of Luminescence

Abstract:GaN-based light-emitting diodes provide higher performance in the short-wavelength part of the visible and ultraviolet spectrum than any other material system. However, there is still a great need for improvement of the extraction efficiency. Because many parts of emitting light of LED suffer absorption of the metal contacts and bond pads, also by active layer. So the employment of highly reflective metal ohmic contacts with a low contact resistance could substantially improve the GaN extraction efficiency of GaN-based LED, especially for vertical structure LED fabricated by laser lift-off process, which have more light output surface and high thermal conductivity than normal structure LED. The high reflectivity of omni-direction reflector is reported, that is, incorporation of Ag and Al onto the contact layers acting as a reflecting layer. Firstly, the reflectivity of the layers Ti/Ag, Al, Ni/Au/Ti/Ag and Ni/Au/Al were calculated through the theory of optical films. Then the reflectivity and contact characteristic of the GaN-based LED samples with these multi-layers on p-type GaN were measured. The result showed high omni-directional reflectors can be achieved over Ag-based films structure, and Al-based also, but the Ag-based films can provide higher reflectivity of 80%, which is better than that of Al-based film. The current-voltage curves showed low resistance on these contact layers except the Al direct on p-GaN. And the resistance of Ni/Au/Ti/Ag and Ni/Au/Al just depends on the annealed Ni/Au layers. Here the Ni/Au layers not only supply the ohmic contact but also the spreading the current. The conglomerate and oxidation of Ag film under high temperature are eliminated by introducing other Ni/Au cladding layers. Because the thickness of Ag is enough for high reflectivity so the additional layers after Ag also have no effect on the reflectivity. The good stability, low resistance and high reflectivity were obtained by two-step annealing methods. Then we applied the multi-layer Ni/Au/Ti/Ag/NiAu to vertical structure light emitting diodes (LED) by laser lift-off technology. The light output efficiency was improved significantly. The vertical structure LED with high reflective contact layer was fabricated successfully.
Ni/Ag/Pt Ohmic Contacts to P-type GaN

MA Hong-xia,HAN Yan-jun,SHENTU Wei-jin,ZHANG Xian-peng,LUO Yi,QIAN Ke-yuan

DOI: https://doi.org/10.3321/j.issn:1005-0086.2006.06.002

2006-01-01

Abstract:A novel Ni/Ag/Pt(3 nm/120 nm/2 nm)structure used as ohmic contact to p-GaN with high reflectance and low specific contact resistivity(SCR) was presented.After annealed at 500 ℃ in O_2 ambient for 3 min,the SCR with 4.43×10~(-4) Ω·cm~2 and optical reflectance of 80 % at 460 nm were obtained.The root-mean-square(RMS) roughness of the Ni/Ag/Pt sample surface is 10 nm.Auger electronic spectroscope(AES) analysis shows that Ni and Ag are important for ohmic contact,and the surface morphology of Ag-based ohmic contacts is improved by Pt.
The Reflectivity and Ohmic Contact Resistivity of Ni/Ag/Ti/Au in Contact with P-Gan

黄亚平,云峰,丁文,王越,王宏,赵宇坤,张烨,郭茂峰,侯洵,刘硕

DOI: https://doi.org/10.7498/aps.63.127302

2014-01-01

Abstract:The ohmic reflectivity of Ni/Ag/Ti/Au in contact with p-GaN is studied. It is found that under different thickness values of Ni, different annealing temperatures and different annealing atmospheres, the performances of Ni/Ag/Ti/Au electrode are greatly changed. The contact resistivity is measured using the transmission line model. The reflectivity of the electrode is investigated by using a spectrophotometer. The results reveal that the thinner the Ni metal layer, the higher its reflectivity is, in addition, the thickness value of Ni metal has a little influence on contact resistivity. There appears an abrupt decrease in reflectivity of electrode after annealing at a temperature higher than 400 ℃. It is noticed that the reflectivity decreases more sharply after annealing in oxygen atmosphere than in nitrogen atmosphere. However, annealing in oxygen atmosphere is more helpful to reduce the contact resistivity. The comprehensive evaluations of the contact resistivity and reflectivity indicate that the better performances of Ni (1 nm)/Ag/Ti/Au electrode after rapid annealing in oxygen atmosphere at 400 ℃ are achieved: its contact resistance reaches 5.5× 10-3 Ω·cm2 and reflectivity rises up to 85% at 450 nm. Light emitting diode (LED) of vertical structure is fabricated with an optimal electrode. The LED under an injection current of 350 mA can achieve the following working parameters: the working voltage is 3.2 V, the optical output power is 270 mW, and the electro-optical conversion efficiency is 24%.
Novel Structural TilAI-based Ohmic Contacts on AIGaN/GaN Heterostructures

Jinyan Wang,C. P. Wenl,Yangyuan Wang

2008-01-01

Abstract:To improve the performances of ohmic contacts for GaN devices, a novel multilayer TilAI-based metal scheme (TilAI/TilAI/TilAI/TiiAI/NilAu) on undoped AIGaN/GaN heterostructures was employed. A contact with pc (specific contact resistance) of 8.74E-07 .Q·cm2, Rc of 0.22 .Q·mm was demonstrated. Ohmic contacts with the novel metal structure were measured with I-V, SEM, HRTEM to show their properties. The results showed that ohmic contacts with novel structures have better surface morphology and proposed thermal stability than those using conventional TilAI/NilAu metal scheme, therefore ohmic contacts with novel structures should be better candidates for high power and high frequency GaN devices.
Optimization of annealing conditions for Ag/p-GaN ohmic contacts

Sai Pan,Youming Lu,Zhibin Liang,Chaojun Xu,Danfeng Pan,Yugang Zhou,Rong Zhang,Youdou Zheng

DOI: https://doi.org/10.1007/s00339-021-05022-6

Abstract:The electrical and optical properties of Ag/p-GaN contacts have been investigated as a function of the annealing temperature, oxygen concentration, and annealing time. Specific contact resistance (ρ c) values as low as 1.2 × 10-4 Ω·cm2 were obtained from the Ag/p-GaN contact annealed at 400 °C for 60 s in ambient O2/N2 (1:10). We found that the participation of oxygen improves the formation of ohmic contacts. Oxygen might remove the H in Mg-H complexes to activate the Mg acceptors and enhance Ga out-diffusion to form an Ag-Ga solid solution. We also found that the reflectivity of the Ag layer decreases with increasing annealing temperature in the O2-containing ambient environment. Thus, an optimal annealing condition of Ag/p-GaN for blue and green LEDs is suggested based on these results. We also used the suggested annealing conditions to form ohmic contacts on DUV LEDs and achieved good electrical performance. The forward voltages of UVC LEDs fabricated with annealed Ag contacts were 6.60 V (7.66 V) at a 40 mA (100 mA) injection current.
Study on the p-type ohmic contact in GaAs-based laser diode

Tao Lin,Jia-nan Xie,Shao-huan Ning,Qing-min Li,Bo Li

DOI: https://doi.org/10.1016/j.mssp.2020.105622

IF: 4.1

2021-03-01

Materials Science in Semiconductor Processing

Abstract:In this paper, the p-GaAs ohmic contact, which is important to improve the conversion efficiency and long-term reliability of high-power optoelectronic devices, was studied. The p-GaAs layer was grown by metal-organic chemical vapor deposition (MOCVD) with a hole concentration of 1.2×1020cm-3, and the metal electrode was fabricated by E-beam evaporation technology based on Ti/Pt/Au metal system. The CTLM tests showed that the p-GaAs contacts were both typical ohmic contact before and after annealing, and the smallest specific contact resistivity of 4.8×10-6Ω·cm2 was obtained after annealing, which mainly due to the direct tunneling effect on the highly doped p-GaAs surface and the formed non-alloy ohmic contact. SEM and EDX analysis showed that the annealing processes used in the n-GaAs metal alloy for laser diode had a little influence on the surface morphology and inter-diffusion of As, Pt, Au elements, while it enhanced the inter-diffusion of Ga and Ti in the contact.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Light Extraction Efficiency Enhancement of GaN-based Blue LEDs Based on ITO/ InxO Ohmic Contacts with Microstructure Formed by Annealing in Oxygen.

Yi Luo,Yiming Bai,Yanjun Han,Hongtao Li,Lai Wang,Jian Wang,Changzheng Sun,Zhibiao Hao,Bing Xiong

DOI: https://doi.org/10.1364/oe.24.00a797

IF: 3.8

2016-01-01

Optics Express

Abstract:Indium tin oxide (ITO)/ indium oxide (InxO) double layer structure was adopted as the transparent conduction and light scattering function layer to improve the light extraction efficiency of the GaN-based blue LEDs. The double layer structure was first deposited in one run by electron beam evaporation using ITO and Indium as the source respectively, and then annealed in an oxygen environment. This method can fabricate transparent electrode with microstructure and low specific contact resistivity one time free from lithography and etching, which makes the fabrication process simple and at a ower cost. For the 220 nm ITO/ 170 nm InxO double layer sample annealed at 600°C for 15 min in oxygen, measurement results show that its root mean square of roughness of the surface microstructure can be as high as 85.2 nm which introduces the strongest light scattering. Its light transmittance at 450 nm can maintain 92.4%. At the same time, it can realize lower specific contact resistivity with p-InGaN. Compared with the GaN-based blue LEDs with only 220 nm ITO electrode, the light output power of the LEDs with 220 nm ITO/ 170 nm InxO double layer structure can be increased about 58.8%, and working voltage at 20 mA injection current is decreased about 0.23 V due to the enhanced current spreading capability. The light output power improvement is also theoretically convinced by finite difference time domain simulations.
High thermal stability Ohmic contact for GaN-based devices

Chia-Yi Wu,Tien-Sheng Chao,Yi-Chia Chou

DOI: https://doi.org/10.1039/d3na00491k

IF: 5.598

2023-08-24

Nanoscale Advances

Abstract:Co-integration of gallium nitride (GaN) power devices with Si logic ICs makes a way of applying high power and high efficiency circuits on a single chip. In order to co-integrate GaN devices with Si ICs, an Ohmic contact for GaN devices has to be Si compatible and durable under the same or higher temperature of the back-end process in the conventional complementary metal oxide semiconductor (CMOS) industry. In this work, an Au-free Ohmic junction with high thermal stability for AlGaN/GaN high electron mobility transistors (HEMTs) was presented. The proposed titanium nitride (TiN) contacts on AlGaN/GaN HEMTs remained its Ohmic characteristic and stayed stable at temperatures even higher than 1000 ̊C. The interface chemistry analyzing using STEM EELS revealed the enhancement of the binding energy of Ga-N and Al-N and invisible diffusion of Ti at the treatment under 1000 ̊C. This clarifies the origin of the highly stable Ohmic contact. Thus, our work provides a new pathway and thought for forming reliable contacts for HEMTs or another GaN-base device.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Reflective Ni/Ag/Ti/Au Electrode with Low Specific Contact Resistivity

Wei Zheng-Hong,Yun Feng,Wen Ding,Huang Ya-Ping,Wang Hong,Qiang Li,Zhang Ye,Guo Mao-Feng,Shuo Liu,Hongbin Wu

DOI: https://doi.org/10.7498/aps.64.127304

IF: 0.906

2015-01-01

Acta Physica Sinica

Abstract:The specific contact resistivity and reflectivity of Ni/Ag/Ti/Au contact with p-GaN are studied. It is found that the thickness of Ag, anneal time and deposition temperature have a great effect on the performance of Ni/Ag/Ti/Au electrode. Its optical reflectivity is measured by reflectivity spectrophotometer, and its specific contact resistivity is calculated by circular transmission line model. It is observed that the contact reflectivity values of Ni (1 nm)/Ag/Ti (100 nm)/Au (100 nm), when the thickness values of Ag are 25 nm and 50 nm, are low: their values are 68.5% and 82.1% at 450 nm, respectively, and they start to increase with increasing the Ag thickness, then reach their saturated values when Ag thickness is beyond 200 nm. When the anneal time changes from 1 min to 10 min in oxygen atmosphere, the specific contact resistivity decreases at 300 ℃, decreases further and then increases at 400-600 ℃. After annealing at temperatures at 300 ℃ and 400 ℃ in oxygen atmosphere, the contact reflectivity value of Ni/Ag/Ti/Au remains almost unchanged, even when anneal time increases from 1 min to 10 min. However, The contact reflectivity of Ni/Ag/Ti/Au decreases significantly after annealing at a temperature higher than 400 ℃ and it becomes smaller with longer annealing time. After 400 ℃ annealing in oxygen atmosphere for 3 min, the specific contact resistivity reaches 3.6×10-3 Ω·cm2. Additionally, the deposition temperature of Ni/Ag is investigated. It is noticed that the specific contact resistivity decreases and the reflectivity increases with increasing the deposition temperature from room temperature to 120 ℃. The reflectivity rises to 90.1% at 450 nm and the specific contact resistivity reaches 6.4×10-3Ω·cm2 for the Ni/Ag/Ti/Au electrode at a deposition temperature of 120 ℃. However, the effects of improving the electrical and optical characteristics weaken when deposition temperature changes from 120 ℃ to 140 ℃. With a overall consideration, Ni (1 nm)/Ag (200 nm)/Ti (100 nm)/Au (100 nm) is made at a deposition temperature of 120 ℃, and then anneals at 400 ℃ for 3 min in oxygen atmosphere to achieve the optimized electrode. The vertical light emitting diode with this Ni/Ag/Ti/Au electrode is fabricated. Its working voltage is 2.95 V and the light output power is 387.1 mW at 350 mA. The electro-optical conversion efficiency reaches 37.5%.
High-Performance Gan-Based Leds with Azo/Ito Thin Films As Transparent Contact Layers

Dan Chen,Jianguo Lu,Rongkai Lu,Lingxiang Chen,Zhizhen Ye

DOI: https://doi.org/10.1109/ted.2017.2693499

2017-01-01

Abstract:The Al-dopedZnO(AZO)/indium tin oxide (ITO) bilayer films were proposed as transparent contact layers (TCLs) for the fabrication of GaN-based light-emitting diodes (LEDs). In TCLs on the p-type GaN layer, the ITO film serves as the ohmic contact layer with the thickness of only 20 nm, whereas the 300-750nm AZO films act as the current spreading layer. At an optimal AZO thickness of 500 nm, GaN-based LEDs with AZO/ITO TCLs have a forward voltage of 3.36 V, an electroluminescence emission at 526 nm with highest brightness and a large light intensity of 386 mcd at 20 mA, which are almost the same as the commercial LEDs with a 300-nm ITO TCL. The 500-nm AZO/20-nm ITO bilayer films exhibit a high transparency above 90% in the visible region, but they display a low conductivity with resistivity similar to 7 x 10(-3) Omega.cm. The success of GaN-based LEDs with such a relatively high-resistivity electrode strongly demonstrates that the AZO/ITO film is a very effective and practical TCL on the p-type GaN layer. The indium-saving AZO/ITO TCLs may be actually a universal approachas p-type electrodes in high-performance GaN-based LEDs for commercially mass production with low cost.
The Study on the Reflectance and Resistance of Ni/Ag/Ti/Au Electrode Contact to p-GaN

Huang Yaping,Yun Feng,Wen Ding,Wang Yue,Hong Wang,Yukun Zhao

DOI: https://doi.org/10.1149/06001.0539ecst

2014-01-01

ECS Transactions

Abstract:The combination of Ni, Ag, Ti and Au which form both reflective and ohmic multilayer contacts for vertical structure light emitting diode applications are studied. The specific contact resistance and reflectivity under different annealing temperature (200, 300, 400, 500 and 600 ℃) and different annealing atmosphere (nitrogen and oxygen) are measured. The annealing atmosphere of oxygen can lead to lower contact resistance than that of nitrogen as annealing temperature increase. However, a higher annealing temperature will lead to a lower reflectivity, especially in the oxygen atmosphere. Comprehensively considering the reflectance and resistance, we obtain the lowest contact resistivity of 5.5×10-3 Ωcm2 and relatively higher reflectivity of 88% at 450 nm.
Indium Tin Oxide (ITO) based Ohmic Contacts on Bulk n-GaN Substrate

Balaadithya Uppalapati,Akash Kota,Samee Azad,Lavanya Muthusamy,Binh Tinh Tran,Heather Splawn,Durga Gajula,Vamsy P. Chodavarapu,Goutam Koley,Jacob Leach

DOI: https://doi.org/10.1149/2162-8777/aca432

IF: 2.2

2022-11-19

ECS Journal of Solid State Science and Technology

Abstract:A transparent indium tin oxide (ITO) contact to bulk n-GaN and n-GaN thin film on c-face sapphire with a specific contact resistivity of 8.06×10 -4 Ω.cm 2 and 3.71×10 -4 Ω.cm 2 was measured, respectively. Our studies relied on an RF sputtering system for ITO deposition. We have investigated the formation of the ITO-based contacts on untreated and plasma treated samples. A nonlinear I-V curve was observed for ITO deposited on untreated samples. On the other hand, an I-V curve with linear behavior was observed for plasma-treated samples, indicating the formation of ohmic contacts. From the C-V measurements, it was observed that there was also an increase in the carrier concentration in plasma treated samples compared to untreated samples. This can be attributed to the removal of surface oxide layer present on the GaN surface, and increase in nitrogen vacancies after SiCl 4 plasma treatment. In addition, the increase in nitrogen vacancies at the GaN surface can also enhance localized surface/sub-surface carriers, thereby reducing the contact resistance further.

materials science, multidisciplinary,physics, applied
Analysis of Optical and Electrical Properties of Ag/ITO Composite Membrane for GaN-based LED

YU Bin,WANG Yu-xia

2013-01-01

Abstract:The samples of Ag/ITO multilayer films sedimentary with different Ag layer thickness of 0.5nm,2nm and 4nm are prepared,which is on the epitaxial wafer of sapphire substrate and contacts with p-GaN,and an annealing treatment on the samples is made.The effects of Ag thickness,annealing temperature and annealing time on the transmittance of Ag/ITO multilayer films,sheet resistance and specific contact resistance are investigated.The results show that,as a P-type transparent electrode,Ag/ITO multilayer films with good photoelectric properties applied in high power LED will have broad prospects.
Ohmic Contact with a Contact Resistivity of 12 Ω ⋅ Mm on P-Gan/algan/gan

Chu-Ying Tang,Hong-Hao Lu,Ze-Peng Qiao,Yang Jiang,Fang-Zhou Du,Jia-Qi He,Yu-Long Jiang,Qing Wang,Yu

DOI: https://doi.org/10.1109/led.2022.3193004

IF: 4.8157

2022-01-01

IEEE Electron Device Letters

Abstract:A robust ohmic contact process with ultralow contact resistivity on p-GaN/AlGaN/GaN is demonstrated. An in-situ removal of GaO X interfacial layer after contact metal deposition is developed. Using the novel Mg/Pt/Au stack as the contact metal, a stable ohmic contact is obtained after 450°C/300 s annealing with ohmic contact resistivity of $12 \Omega \cdot {\mathrm {mm}}$ ( $1.8\times 10^{-5}\, \Omega \cdot {\mathrm {cm}}^{2}$ ). A new ohmic contact formation mechanism on p-GaN/AlGaN/GaN is also proposed.

ITO/AIN/AI ohmic contact for p-GaN with high reliability and optical reflectivity

Highly Reflective Ni/Ag/Pt/Au Ohmic Contacts To P-Gan With Ito Interlayer

GaInN Light-Emitting Diodes with Omni-Directional Reflector Using Nanoporous SnO2 Film

The Effect of p-InGaN layer on ITO based ohmic contacts to p-GaN

High-reflectance Ohmic Contacts to P-Gan of GaN-based Violet LEDs

A Novel Ni/Ag/Pt Ohmic Contact to P-Type GaN for Flip-Chip Light-Emitting Diodes

Ohmic Contacts in GaN-based Devices

Ohmic Contact of High Reflectivity on P-Type GaN

Ni/Ag/Pt Ohmic Contacts to P-type GaN

The Reflectivity and Ohmic Contact Resistivity of Ni/Ag/Ti/Au in Contact with P-Gan

Novel Structural TilAI-based Ohmic Contacts on AIGaN/GaN Heterostructures

Optimization of annealing conditions for Ag/p-GaN ohmic contacts

Study on the p-type ohmic contact in GaAs-based laser diode

Light Extraction Efficiency Enhancement of GaN-based Blue LEDs Based on ITO/ InxO Ohmic Contacts with Microstructure Formed by Annealing in Oxygen.

High thermal stability Ohmic contact for GaN-based devices

Reflective Ni/Ag/Ti/Au Electrode with Low Specific Contact Resistivity

High-Performance Gan-Based Leds with Azo/Ito Thin Films As Transparent Contact Layers

The Study on the Reflectance and Resistance of Ni/Ag/Ti/Au Electrode Contact to p-GaN

Indium Tin Oxide (ITO) based Ohmic Contacts on Bulk n-GaN Substrate

Analysis of Optical and Electrical Properties of Ag/ITO Composite Membrane for GaN-based LED

Ohmic Contact with a Contact Resistivity of 12 Ω ⋅ Mm on P-Gan/algan/gan