TheEffect Ofp-Ingan Layer Onitobasedohmiccontacts Top-Gan

Yanjun Han,Zhongtao Liu,MA Hong-xia

2007-01-01

Abstract:Byepitaxy ofathinp-lnGaN layer onp-GaNsurface andoptimization ofInGaN/GaN heterostructures annealing condition, ohmiccontact top-GaNwithhightransparency was obtained byusingelectron beam evaporated indium tinoxide film. ~~~~~~~~~~~~~~~~~~~~~~~500 C 0.20 ~~~~~~~~~~~~~~~~~~~~~~~5500C ~~~0.15~~~~~~~~~~0.01 6500C

What problem does this paper attempt to address?

The Effect of p-InGaN layer on ITO based ohmic contacts to p-GaN

Han, Yanjun,Zhongtao Liu,Luo, Yi,Ma Hongxia,XianPeng Zhang,Lai Wang

DOI: https://doi.org/10.1109/INOW.2007.4302897

2007-01-01

Abstract:By epitaxy of a thin p-lnGaN layer on p-GaN surface and optimization of InGaN/GaN heterostructures annealing condition, ohmic contact to p-GaN with high transparency was obtained by using electron beam evaporated indium tin oxide film.
Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Shi Linyu,Zhang Jincheng,Wang Hao,Xue Junshuai,Ou Xinxiu,Fu Xiaofan,Chen Ke,Hao Yue

DOI: https://doi.org/10.1088/1674-4926/31/12/123001

2010-01-01

Journal of Semiconductors

Abstract:>We study the growth of an InGaN and AlGaN/GaN/InGaN/GaN double heterojunction structure by metal organic chemical vapor deposition(MOCVD).It is found that the crystal quality of the InGaN back barrier layer significantly affects the electronic property of the AlGaN/GaN/InGaN/GaN double heterojunction.A high crystal quality InGaN layer is obtained by optimizing the growth pressure and temperature.Due to the InGaN layer polarization field opposite to that in the AlGaN layer,an additional potential barrier is formed between the GaN and the InGaN layer, which enhances carrier confinement of the 2DEG and reduces the buffer leakage current of devices.The double heterojunction high-electron-mobility transistors with an InGaN back barrier yield a drain induced barrier lowering of 1.5 mV/V and the off-sate source-drain leakage current is as low as 2.6μA/mm at V DS = 10 V.
Highly Reflective Ni/Ag/Pt/Au Ohmic Contacts To P-Gan With Ito Interlayer

Meng Liang,Xiao-Yan Yi,Zhi-Qiang Liu,Bing Wang,Qin-Feng Kong,Jun-Xi Wang,Jin-Min Li

2014-01-01

Abstract:In this work, a metal stack of Ni/Ag/Pt/Au with a 1nm-thick ITO (indium-tin-oxide) interlayer which formed highly reflective and ohmic contacts to p-GaN had been investigated. A strong interdiffusion of Ni/Ag/Pt/Au was observed when annealing over 500 degrees C for forming ohmic contact. As a result, the reflectance of Ni/Ag/Pt/Au contacts drastically decreased. A thin ITO layer grown between Ni/Ag/Pt/Au and p-GaN could lower the annealing temperature. And an optical reflectivity of 84% at 460nm was obtained after thermal annealing at 300 degrees C, while the specific contact resistance of ITO-Ni/Ag/Pt/Au contacts was found to be 2.16 x 10(-5) Omega . cm(2). In addition, the flip chip LEDs (light emitting diodes) fabricated with the ITO-Ni/Ag/Pt/Au contacts had a low voltage of 2.9V at 31A/cm(2).
Ni/Pd-based Ohmic Contacts to P-Gan Through P-Ingan/p+-gan Contacting Layers

Minglong Zhang,Masao Ikeda,Siyi Huang,Jianping Liu,Jianjun Zhu,Shuming Zhang,Hui Yang

DOI: https://doi.org/10.1088/1674-4926/43/9/092803

2022-01-01

Abstract:Specific contact resistance rho(c) to p-GaN was measured for various structures of Ni/Pd-based metals and thin (2030 nm thick) p-InGaN/p(+)GaN contacting layers. The effects of surface chemical treatment and annealing temperature were examined. The optimal annealing temperature was determined to be 550 degrees C, above which the sheet resistance of the samples degraded considerably, suggesting that undesirable alloying had occurred. Pd-containing metal showed similar to 35% lower rho(c) compared to that of single Ni. Very thin (2-3.5 nm thick) p-InGaN contacting layers grown on 20-25 nm thick p(+)-GaN layers exhibited one to two orders of magnitude smaller values of rho(c) compared to that of p(+)-GaN without p-InGaN. The current density dependence of rho(c), which is indicative of nonlinearity in current-voltage relation, was also examined. The lowest rho(c) achieved through this study was 4.9 x 10(-5) Omega.cm(2)@ J= 3.4 kA/cm(2).
Effect of annealing on the properties of indium-tin-oxynitride films as ohmic contacts for gan-based optoelectronic devices

Marcel Himmerlich,Maria Koufaki,Gernot Ecke,Christof Mauder,Volker Cimalla,Juergen A Schaefer,Antonis Kondilis,Nikos T Pelekanos,Mircea Modreanu,Stefan Krischok,Elias Aperathitis

DOI: https://doi.org/10.1021/am900138f

Abstract:Indium-tin-oxynitride (ITON) films have been fabricated by rf sputtering from an indium-tin-oxide target in nitrogen plasma. The influence of postdeposition annealing up to 800 degrees C is analyzed by electrical, optical, and surface characterization of the films in comparison to indium-tin-oxide (ITO) films fabricated in argon plasma. High-temperature annealing resulted in ITO(N) films with similar carrier concentrations. However, the resistivity and optical transmittance of the ITON films were higher than those of the ITO films. Photoelectron spectroscopy revealed that nitrogen is incorporated into the ITON structure in an unbound state as well as through the formation of metal-nitrogen and oxynitride bonds that decorate oxygen vacancies. When the core level electron spectra of ITO and ITON films are compared, a correlation between carrier concentration and the incorporated nitrogen is found. Changes in ITON electrical properties are mainly induced by the release of nitrogen at temperatures above 550 degrees C. In this context, ohmic contact behavior was achieved for ITON on p-type GaN after annealing at 600 degrees C, while no ohmic contact could be realized using ITO.
Effects of Thin Heavily Mg-Doped Gan Capping Layer on Ohmic Contact Formation of P-Type Gan

L. L. Wu,D. G. Zhao,D. S. Jiang,P. Chen,L. C. Le,L. Li,Z. S. Liu,S. M. Zhang,J. J. Zhu,H. Wang,B. S. Zhang,H. Yang

DOI: https://doi.org/10.1088/0268-1242/28/10/105020

IF: 2.048

2013-01-01

Semiconductor Science and Technology

Abstract:The growth condition of thin heavily Mg-doped GaN capping layer and its effect on ohmic contact formation of p-type GaN were investigated. It is confirmed that the excessive Mg doping can effectively enhance the Ni/Au contact to p-GaN after annealing at 550 °C. When the flow rate ratio between Mg and Ga gas sources is 6.4% and the layer width is 25 nm, the capping layer grown at 850 °C exhibits the best ohmic contact properties with respect to the specific contact resistivity (ρc). This temperature is much lower than the conventional growth temperature of Mg-doped GaN, suggesting that the deep-level-defect induced band may play an important role in the conduction of capping layer.
The Significant Effect of the Thickness of Ni Film on the Performance of the Ni/Au Ohmic Contact to P-Gan

X. J. Li,D. G. Zhao,D. S. Jiang,Z. S. Liu,P. Chen,J. J. Zhu,L. C. Le,J. Yang,X. G. He,S. M. Zhang,B. S. Zhang,J. P. Liu,H. Yang

DOI: https://doi.org/10.1063/1.4900729

IF: 2.877

2014-01-01

Journal of Applied Physics

Abstract:The significant effect of the thickness of Ni film on the performance of the Ohmic contact of Ni/Au to p-GaN is studied. The Ni/Au metal films with thickness of 15/50 nm on p-GaN led to better electrical characteristics, showing a lower specific contact resistivity after annealing in the presence of oxygen. Both the formation of a NiO layer and the evolution of metal structure on the sample surface and at the interface with p-GaN were checked by transmission electron microscopy and energy-dispersive x-ray spectroscopy. The experimental results indicate that a too thin Ni film cannot form enough NiO to decrease the barrier height and get Ohmic contact to p-GaN, while a too thick Ni film will transform into too thick NiO cover on the sample surface and thus will also deteriorate the electrical conductivity of sample.
The Dichotomous Role of Oxygen in the Ohmic Contact Formation on P-Type GaN Grown by MBE and MOCVD

Haowen Hua,Peng Zhang,Yi Gong,Ying Gu,Shan Jin,Wenxian Yang,Jianjun Zhu,Shulong Lu

DOI: https://doi.org/10.1016/j.surfin.2024.104974

IF: 6.2

2024-01-01

Surfaces and Interfaces

Abstract:Molecular beam epitaxy (MBE) is often considered as an ideal equipment for growing low-resistance p-type GaN (p-GaN). However, the Ohmic contact formation mechanism of p-GaN grown by MBE is still unclear. In this work, MOCVD and MBE-grown p-GaN were prepared for contrastive analysis. We reported for the first time the different variation tendency in their electrical properties after annealing in the same ambient. Surface analyzing instruments were used to investigate the interfacial properties of p-GaN. Experimental results revealed that the oxygen in the annealing ambient had a negative effect on the Ohmic contact formation of MBE p-GaN, and the physical mechanism underlying it was figured out. It is proved that the annealing conditions for preparing Ohmic contacts on MOCVD p-GaN is not suitable for that on MBE p-GaN. To further reduce the effect of oxygen, an optimized Ohmic contact scheme for MBE p-GaN based on the Ni-Pd contact layer was proposed, which successfully reduced the specific contact resistivity (rho(c)) by two orders, to 8.6 x 10(-5) Omega center dot cm(2), compared with the conventional Pd/Pt/Au system. This research provides valuable guidance for device fabrication based on GaN grown by MBE and lays an essential foundation for preparing optoelectronic devices.
Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer

Qingzhi Meng,Qijing Lin,Weixuan Jing,Na Zhao,Ping Yang,Dejiang Lu

DOI: https://doi.org/10.3390/mi13050791

IF: 3.4

2022-01-01

Micromachines

Abstract:A side ohmic contact mode for the double channel GaN/AlGaN epitaxial layer is proposed in this paper. Rectangle transmission line model (TLM) electrodes are prepared, and the specific contact resistance is tested at the annealing temperatures from 700 °C to 850 °C. The results show that the minimum specific contact resistance is 2.58 × 10−7 Ω·cm2 at the annealing temperature of 750 °C, which is three to four times lower than the surface contact mode. Scanning electron microscope (SEM), energy dispersive spectrometer (EDS), and atomic force microscope (AFM) were carried out for the analysis of the morphology, element composition, and the height fluctuation at the contact edge. With the increase in the annealing temperature, the specific contact resistance decreases due to the alloying of electrodes and the raised number of N vacancies. However, when the annealing temperature exceeds 800 °C, the state of the stress in the electrode films transforms from compressive stress to tensile stress. Besides, the volume expansion of metal electrode film and the increase in the roughness at the contact edge leads to the degradation of the side ohmic contact characteristics.
Effects of Ag on Electrical Properties of Ag/Ni/P-Gan Ohmic Contact

Zhao De-Sheng,Zhang Shu-Ming,Duan Li-Hong,Wang Yu-Tian,Jiang De-Sheng,Liu Wen-Bao,Zhang Bao-Shun

DOI: https://doi.org/10.1088/0256-307x/24/6/085

2007-01-01

Chinese Physics Letters

Abstract:Properties of the Ag/Ni/p-GaN structure at different temperatures are studied by Auger electron spectroscopy, scanning electron microscopy and high resolution x-ray diffraction. The effect of Ag in ohmic contact on the crystalline quality is investigated and the optimized value of annealing temperature is reported. The lowest specific contact resistance of 2.5×10−4 Ωcm2 is obtained at annealing temperature of 550°C.
Effects of Surface Chemical Treatment and Annealing on P-Gan/zno: Ga Contact

WANG Shu-fang,LI Xi-feng,ZHANG Jian-hua

2010-01-01

Chinese Journal of Luminescence

Abstract:ZnO∶Ga(GZO) transparent conductive thin film was deposited on p-GaN acting as the current spreading layer,but it leads to a large contact barrier because of the formation of Schottky contact.However,ohmic contact is of great importance to powered LED.In order to decrease the contact barrier,HCl and NaOH treatment of the p-GaN surface and annealing were employed in this work.The effects of different chemical treatment and annealing on p-GaN/GZO contact property were studied.It is obvious that solutions of alkaline treatment of p-GaN surface can decrease the interfacial barrier,which led to ohmic contact,and the barrier can be lightly increased by annealing.
A Novel Ni/Ag/Pt Ohmic Contact to P-Type GaN for Flip-Chip Light-Emitting Diodes

Ma Hong-Xia,Han Yan-Jun,Shentu Wei-Jin,Zhang Xian-Peng,Luo Yi

DOI: https://doi.org/10.1088/0256-307x/23/8/092

2006-01-01

Abstract:We present a high-quality Ni/Ag/Pt Ohmic contact to p-type GaN. After the sample is annealed at 500°C in O2 ambient for 3 min, a specific contact resistance as low as 2.6×10−5 Ω.cm2 and an optical reflectivity of 82% at 460 nm are obtained. The Auger electron spectroscopy analysis shows that the Pt layer can improve the surface morphology and thermal reliability of the annealed Ag-based electrode, Ag plays a key role in achieving good ohmic contact due to the outdiffusion of Ga into Ag forming Ga vacancies which increase the hole concentration, while the surface contamination of p-type GaN is reduced by Ni.
Ohmic Contact of Ti/Al/Ni/Au on N-Face GaN

Zhenyi Xu,Binbin Ye,Jianyue Lan,Chao Dong,Xuewei Li,Jianfeng Wang,Ke Xu

DOI: https://doi.org/10.13290/j.cnki.bdtjs.2017.09.010

2017-01-01

Abstract:After pretreatment of inductively coupled plasma (ICP) etching,the Ti/Al/Ni/Au ohmic contact with the specific contact resistivity of 3.7× 10-4 Ω · cm2 was developed on the N-face single crystal GaN substrate grown by hydride vapor phase epitaxy (HVPE).The surface topography and optical properties of the N-face GaN were characterized and compared by scanning electron microscope,atomic force microscope,cathode-luminescence and photoluminescence.The results indicate that the damage layers over N-face of the un-etched GaN sbustrate introduce impurities and defects and hinder the formation of ohmic contact.However,the ICP etching treatment can remove the surface damage layers effectively.X-ray photoelectron spectroscopy (XPS) analysis shows that Ga 3d core level of the etched sample shifts approximately 0.3 eV toward higher binding energy,as compared with the Ga 3d core level of the unetched sample,which indicates a reduction of the Schottky barrier height.The etching treatment is helpful for the formation of ohmic contact.Ti/Al/Ni/Au ohmic contact on N-face of Fe-doped semi-insulating GaN substrate with the etching process also shows good ohmic contact with the specific contact resistivity of 0.12 Ω·cm2.
Effect of P-Gan Layer on the Properties of Ingan/Gan Green Light-Emitting Diodes

Wang Wenliang,Liu Zuolian,Zhou Shizhong,Yang Weijia,Lin Yunhao,Wang Haiyan,Lin Zhiting,Qian Huirong,Li Guoqiang

DOI: https://doi.org/10.1557/jmr.2015.5

2015-01-01

Abstract:InGaN/GaN green light-emitting diodes (LEDs) have been prepared by metal-organic chemical vapor deposition with various growth temperatures for p-GaN layer. The structural and optoelectronic properties of as-grown multiple quantum wells (MQWs) and LEDs are studied in detail. It reveals that with the growth of p-GaN layer, the crystalline qualities of the as-grown n-GaN layer are improved significantly, while the optoelectronic properties of MQWs are decreased dramatically. Furthermore, the mechanisms for the effect of p-GaN growth temperature on the properties of InGaN/GaN green LEDs are proposed. It is demonstrated that the p-GaN layer grown at a suitable temperature of 950 °C shows the highest optoelectronic properties due to the fact that this suitable temperature for p-layer growth is good for the Mg doping and would not cause the fluctuation of indium in the MQWs, and eventually benefits to the effective recombination of carriers. This work provides an optimized p-GaN layer growth temperature for realizing highly efficient InGaN/GaN green LED devices.
Thermal Annealing Effect on Mg-doped InGaN/GaN Heterostructures in O2 Ambient

LIU Zhong-tao,HAN Yan-jun,ZHANG Xian-peng,XUE Xiao-lin,CHEN Dong,WANG Lai,LUO Yi

DOI: https://doi.org/10.3969/j.issn.1001-5868.2007.04.015

2007-01-01

Abstract:The effect of the thermal annealing temperature on the electrical and optical properties of Mg-doped InGaN/GaN heterostructures in O 2 ambient was systematically investigated.The current-voltage characteristics and surface sheet resistance measurements show that,compared with p-GaN,the optimum annealing temperature of p-InGaN/GaN heterostructures is lower and the nonalloyed Ni/Au ohmic contacts can be obtained.It is suggested that relative narrower bandgap of InGaN,strong polarization effect in p-InGaN/GaN heterosturctures,and equilibrium vapor pressure of nitrogen over InN higher than that over GaN are the main reasons for the above results.Furthermore,in the photoluminescence spectrum at 10 K of the as-grown p-InGaN/GaN heterostructures,there are two peaks centered at 2.95 eV and 2.25 eV respectively,whose intensities gradually decrease when the thermal annealing temperature increases.To explain the photoluminescence spectra,the recombination mechanism between H-related complex and Mg-acceptor,in which donor-like compensating center play an important role,was proposed.
ITO/AIN/AI ohmic contact for p-GaN with high reliability and optical reflectivity

HongXia Ma,Yanjun Han,Yi Luo

DOI: https://doi.org/10.1109/INOW.2007.4302963

2007-01-01

Abstract:ITO/AIN/AI scheme is proposed as ohmic contact to p-GaN with high reliability and optical reflectivity. The LEDs with ITO/AIN/AI contact exhibited better thermal stability, electrical and optical performance than ITO/AI and Agbased ones. © 2007 IEEE.
Investigation of the Mechanism for Ohmic Contact Formation in Ti/Al/Ni/Au Contacts to Β-Ga2o3 Nanobelt Field-Effect Transistors.

Jin-Xin Chen,Xiao-Xi Li,Hong-Ping Ma,Wei Huang,Zhi-Gang Ji,Changtai Xia,Hong-Liang Lu,David Wei Zhang

DOI: https://doi.org/10.1021/acsami.9b09166

IF: 9.5

2019-01-01

ACS Applied Materials & Interfaces

Abstract:The issue of contacts between the electrode and channel layer is crucial for wide-bandgap semiconductors, especially the β-Ga2O3 due to its ultra-large bandgap (4.6-4.9 eV). It affects the device performance greatly and thus needs special attention. In this work, the high-performance β-Ga2O3 nanobelt field-effect transistors with Ohmic contact between multilayer metal stack Ti/Al/Ni/Au (30/120/50/50 nm) and unintentionally doped β-Ga2O3 channel substrate have been fabricated. The formation mechanism of Ohmic contacts to β-Ga2O3 under different annealing temperatures in an N2 ambient is systematically investigated by X-ray photoelectron spectroscopy. It is revealed that the oxygen vacancies at the interface of β-Ga2O3/intermetallic compounds formed during rapid thermal annealing are believed to induce the good Ohmic contacts with low resistance. The contact resistance (Rc) between electrodes and unintentionally doped β-Ga2O3 reduces to ∼9.3 Ω mm after annealing. This work points to the importance of contact engineering for future improved β-Ga2O3 device performance and lays a solid foundation for the wider application of β-Ga2O3 in electronics and optoelectronics.
Ohmic Contact with a Contact Resistivity of 12 Ω ⋅ Mm on P-Gan/algan/gan

Chu-Ying Tang,Hong-Hao Lu,Ze-Peng Qiao,Yang Jiang,Fang-Zhou Du,Jia-Qi He,Yu-Long Jiang,Qing Wang,Yu

DOI: https://doi.org/10.1109/led.2022.3193004

IF: 4.8157

2022-01-01

IEEE Electron Device Letters

Abstract:A robust ohmic contact process with ultralow contact resistivity on p-GaN/AlGaN/GaN is demonstrated. An in-situ removal of GaO X interfacial layer after contact metal deposition is developed. Using the novel Mg/Pt/Au stack as the contact metal, a stable ohmic contact is obtained after 450°C/300 s annealing with ohmic contact resistivity of $12 \Omega \cdot {\mathrm {mm}}$ ( $1.8\times 10^{-5}\, \Omega \cdot {\mathrm {cm}}^{2}$ ). A new ohmic contact formation mechanism on p-GaN/AlGaN/GaN is also proposed.
Analysis Of Mass Transport Mechanism In Ingan Epitaxy On Ridge Shaped Selective Area Growth Gan By Metal Organic Chemical Vapor Deposition

Hao Fang,Zhijian Yang,Yanjie Wang,Tao Dai,Liwen Sang,Lubing Zhao,Tongjun Yu,Guoyi Zhang

DOI: https://doi.org/10.1063/1.2829784

IF: 2.877

2008-01-01

Journal of Applied Physics

Abstract:In this work, the evolution of the InGaN layer growth on the ridge shaped GaN was studied. A mass transport model was presented to simulate the epitaxy process of the InGaN layer. The model consisted of two consecutive components, gas-phase diffusion process and surface diffusion process. The mean lifetime of adatoms on epitaxial sur face was associated with their reaction rate in this model. An InGaN layer on ridge shaped GaN, including (0002) and {1122} facets, was grown by metal organic chemical vapor deposition to confirm the mass transport model. Gradient indium content distribution and inhomogeneous thickness of the InGaN layer were observed. Simulation of the InGaN layer growth process was performed by finite difference method with the mass transport model. By analyzing the results from calculations and experiments, the origins of the InGaN layer characteristics were attributed to the two diffusion components in the growth process. Surface diffusion resulted in the inhomogeneous thickness and gas-phase diffusion chiefly led to the gradient indium content. In addition, the adatoms reaction rate on epitaxial surface determined their mean lifetime as speculated by the analysis. The demonstration of the growth process of InGaN layer offers valuable insight in obtaining high efficiency white light emitting diodes by selective area growth technology. (c) 2008 American Institute of Physics.
Ti/Al/Pt/Au and Al Ohmic Contacts on Si-Substrated Gan

ZM Zhao,RL Jiang,P Chen,DJ Xi,HQ Yu,B Shen,R Zhang,Y Shi,SL Gu,YD Zheng

DOI: https://doi.org/10.1063/1.1385189

IF: 4

2001-01-01

Applied Physics Letters

Abstract:Al and Ti/Al/Pt/Au ohmic contacts on GaN epitaxial layers were studied. The epilayers were grown on Si (111) substrates by low-pressure metalorganic chemical vapor deposition. Al/GaN contacts achieved a minimum contact resistivity of 7.5×10−3 Ω cm2 after annealing in N2 ambient at 450 °C for 3 min. Further annealing degraded the contacts. Ti/Al/Pt/Au and GaN contacts achieved a minimum contact resistivity of 8.4×10−5 Ω cm2 after annealing in N2 at 650 °C for 20 s. The Ti/Al/Pt/Au contacts on GaN showed a better thermal stability than Al/GaN contacts. After annealing at 600 °C for 30 min. they were still ohmic contacts. The mechanisms for ohmic contact formation of Ti/Al/Pt/Au contacts were also analyzed.

TheEffect Ofp-Ingan Layer Onitobasedohmiccontacts Top-Gan

The Effect of p-InGaN layer on ITO based ohmic contacts to p-GaN

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Highly Reflective Ni/Ag/Pt/Au Ohmic Contacts To P-Gan With Ito Interlayer

Ni/Pd-based Ohmic Contacts to P-Gan Through P-Ingan/p+-gan Contacting Layers

Effect of annealing on the properties of indium-tin-oxynitride films as ohmic contacts for gan-based optoelectronic devices

Effects of Thin Heavily Mg-Doped Gan Capping Layer on Ohmic Contact Formation of P-Type Gan

The Significant Effect of the Thickness of Ni Film on the Performance of the Ni/Au Ohmic Contact to P-Gan

The Dichotomous Role of Oxygen in the Ohmic Contact Formation on P-Type GaN Grown by MBE and MOCVD

Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer

Effects of Ag on Electrical Properties of Ag/Ni/P-Gan Ohmic Contact

Effects of Surface Chemical Treatment and Annealing on P-Gan/zno: Ga Contact

A Novel Ni/Ag/Pt Ohmic Contact to P-Type GaN for Flip-Chip Light-Emitting Diodes

Ohmic Contact of Ti/Al/Ni/Au on N-Face GaN

Effect of P-Gan Layer on the Properties of Ingan/Gan Green Light-Emitting Diodes

Thermal Annealing Effect on Mg-doped InGaN/GaN Heterostructures in O2 Ambient

ITO/AIN/AI ohmic contact for p-GaN with high reliability and optical reflectivity

Investigation of the Mechanism for Ohmic Contact Formation in Ti/Al/Ni/Au Contacts to Β-Ga2o3 Nanobelt Field-Effect Transistors.

Ohmic Contact with a Contact Resistivity of 12 Ω ⋅ Mm on P-Gan/algan/gan

Analysis Of Mass Transport Mechanism In Ingan Epitaxy On Ridge Shaped Selective Area Growth Gan By Metal Organic Chemical Vapor Deposition

Ti/Al/Pt/Au and Al Ohmic Contacts on Si-Substrated Gan