The Effect of p-InGaN layer on ITO based ohmic contacts to p-GaN

Han, Yanjun,Zhongtao Liu,Luo, Yi,Ma Hongxia,XianPeng Zhang,Lai Wang

DOI: https://doi.org/10.1109/INOW.2007.4302897

2007-01-01

Abstract:By epitaxy of a thin p-lnGaN layer on p-GaN surface and optimization of InGaN/GaN heterostructures annealing condition, ohmic contact to p-GaN with high transparency was obtained by using electron beam evaporated indium tin oxide film.

What problem does this paper attempt to address?

TheEffect Ofp-Ingan Layer Onitobasedohmiccontacts Top-Gan

Yanjun Han,Zhongtao Liu,MA Hong-xia

2007-01-01

Abstract:Byepitaxy ofathinp-lnGaN layer onp-GaNsurface andoptimization ofInGaN/GaN heterostructures annealing condition, ohmiccontact top-GaNwithhightransparency was obtained byusingelectron beam evaporated indium tinoxide film. ~~~~~~~~~~~~~~~~~~~~~~~500 C 0.20 ~~~~~~~~~~~~~~~~~~~~~~~5500C ~~~0.15~~~~~~~~~~0.01 6500C
Effects of Surface Treatment on Non-alloyed Ti/Al Ohmic Contact of n-GaN

刘磊,陈忠景,何乐年

DOI: https://doi.org/10.3969/j.issn.1672-7126.2004.03.002

2004-01-01

Abstract:The non-alloyed Ti/Al Ohmic contacts grown on top of the n-type GaN film were chemically treated with different solutions. We found that the specific resistivity of the Ohmic contact chemically treated with CH3CSNH2/NH4OH solution can be as low as (4.85-5.65)×10-4Ω·cm2 and the photo-luminescence of the film was also considerably improved.
Highly Reflective Ni/Ag/Pt/Au Ohmic Contacts To P-Gan With Ito Interlayer

Meng Liang,Xiao-Yan Yi,Zhi-Qiang Liu,Bing Wang,Qin-Feng Kong,Jun-Xi Wang,Jin-Min Li

2014-01-01

Abstract:In this work, a metal stack of Ni/Ag/Pt/Au with a 1nm-thick ITO (indium-tin-oxide) interlayer which formed highly reflective and ohmic contacts to p-GaN had been investigated. A strong interdiffusion of Ni/Ag/Pt/Au was observed when annealing over 500 degrees C for forming ohmic contact. As a result, the reflectance of Ni/Ag/Pt/Au contacts drastically decreased. A thin ITO layer grown between Ni/Ag/Pt/Au and p-GaN could lower the annealing temperature. And an optical reflectivity of 84% at 460nm was obtained after thermal annealing at 300 degrees C, while the specific contact resistance of ITO-Ni/Ag/Pt/Au contacts was found to be 2.16 x 10(-5) Omega . cm(2). In addition, the flip chip LEDs (light emitting diodes) fabricated with the ITO-Ni/Ag/Pt/Au contacts had a low voltage of 2.9V at 31A/cm(2).
Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Shi Linyu,Zhang Jincheng,Wang Hao,Xue Junshuai,Ou Xinxiu,Fu Xiaofan,Chen Ke,Hao Yue

DOI: https://doi.org/10.1088/1674-4926/31/12/123001

2010-01-01

Journal of Semiconductors

Abstract:>We study the growth of an InGaN and AlGaN/GaN/InGaN/GaN double heterojunction structure by metal organic chemical vapor deposition(MOCVD).It is found that the crystal quality of the InGaN back barrier layer significantly affects the electronic property of the AlGaN/GaN/InGaN/GaN double heterojunction.A high crystal quality InGaN layer is obtained by optimizing the growth pressure and temperature.Due to the InGaN layer polarization field opposite to that in the AlGaN layer,an additional potential barrier is formed between the GaN and the InGaN layer, which enhances carrier confinement of the 2DEG and reduces the buffer leakage current of devices.The double heterojunction high-electron-mobility transistors with an InGaN back barrier yield a drain induced barrier lowering of 1.5 mV/V and the off-sate source-drain leakage current is as low as 2.6μA/mm at V DS = 10 V.
ITO/AIN/AI ohmic contact for p-GaN with high reliability and optical reflectivity

HongXia Ma,Yanjun Han,Yi Luo

DOI: https://doi.org/10.1109/INOW.2007.4302963

2007-01-01

Abstract:ITO/AIN/AI scheme is proposed as ohmic contact to p-GaN with high reliability and optical reflectivity. The LEDs with ITO/AIN/AI contact exhibited better thermal stability, electrical and optical performance than ITO/AI and Agbased ones. © 2007 IEEE.
Ohmic Contacts in GaN-based Devices

邵庆辉,叶志镇,黄靖云

DOI: https://doi.org/10.3321/j.issn:1005-023x.2003.03.011

2003-01-01

Abstract:Gallium nitride has become one of the most attractive materials for light emitting devices and high-temperature and high-power devices,due to its superior opto-electronic properties. Ohmic contact is a critical technology for preparing GaN based devices. In this paper,research progress in ohmic contacts in n-GaN and p-GaN is presented emphatically.
Effect of annealing on the properties of indium-tin-oxynitride films as ohmic contacts for gan-based optoelectronic devices

Marcel Himmerlich,Maria Koufaki,Gernot Ecke,Christof Mauder,Volker Cimalla,Juergen A Schaefer,Antonis Kondilis,Nikos T Pelekanos,Mircea Modreanu,Stefan Krischok,Elias Aperathitis

DOI: https://doi.org/10.1021/am900138f

Abstract:Indium-tin-oxynitride (ITON) films have been fabricated by rf sputtering from an indium-tin-oxide target in nitrogen plasma. The influence of postdeposition annealing up to 800 degrees C is analyzed by electrical, optical, and surface characterization of the films in comparison to indium-tin-oxide (ITO) films fabricated in argon plasma. High-temperature annealing resulted in ITO(N) films with similar carrier concentrations. However, the resistivity and optical transmittance of the ITON films were higher than those of the ITO films. Photoelectron spectroscopy revealed that nitrogen is incorporated into the ITON structure in an unbound state as well as through the formation of metal-nitrogen and oxynitride bonds that decorate oxygen vacancies. When the core level electron spectra of ITO and ITON films are compared, a correlation between carrier concentration and the incorporated nitrogen is found. Changes in ITON electrical properties are mainly induced by the release of nitrogen at temperatures above 550 degrees C. In this context, ohmic contact behavior was achieved for ITON on p-type GaN after annealing at 600 degrees C, while no ohmic contact could be realized using ITO.
Effect of ITO Interface Modulation Layer on the Performances of LEDs with Ga-doped ZnO Electrode

WANG Wan-jing,LI Xi-feng,SHI Ji-feng,ZHANG Jian-hua

DOI: https://doi.org/10.3788/fgxb20123302.0210

2012-01-01

Abstract:Indium-Tin-Oxide(40 nm)/Ga-doped ZnO(140 nm)(ITO/GZO) and GZO(180 nm) films were deposited onto both glass substrates and p-GaN epitaxial layers by magnetron sputtering as transparent current spreading layer of GaN-based LEDs.After thermal annealing in air ambient conditions,the ITO/GZO films exhibite high transparency(~80%) in visible light and low resistivity(1.15×10-3 Ω·cm).The roughness of the ITO/GZO films is bigger than that of the GZO films which enhances the extraction of photons.The ITO interface modulation layer can reduce the contact barrier of GZO/p-GaN and improve the photoeletric performance of LEDs.GaN-based light-emitting diodes(LEDs) were also fabricated.With 20 mA injection current,it is found that the forward voltage are 6.8 V and 9.5 V,while the luminous intensity are 297 mcd and 245 mcd,respectively for the LEDs with ITO/GZO electrode and GZO electrode.Compared the LEDs with GZO electrodes,the luminous intensity of LEDs with ITO/GZO electrode increased by 20% at 20 mA forward current and increased by 50% at 35 mA forward current.
Indium Tin Oxide (ITO) based Ohmic Contacts on Bulk n-GaN Substrate

Balaadithya Uppalapati,Akash Kota,Samee Azad,Lavanya Muthusamy,Binh Tinh Tran,Heather Splawn,Durga Gajula,Vamsy P. Chodavarapu,Goutam Koley,Jacob Leach

DOI: https://doi.org/10.1149/2162-8777/aca432

IF: 2.2

2022-11-19

ECS Journal of Solid State Science and Technology

Abstract:A transparent indium tin oxide (ITO) contact to bulk n-GaN and n-GaN thin film on c-face sapphire with a specific contact resistivity of 8.06×10 -4 Ω.cm 2 and 3.71×10 -4 Ω.cm 2 was measured, respectively. Our studies relied on an RF sputtering system for ITO deposition. We have investigated the formation of the ITO-based contacts on untreated and plasma treated samples. A nonlinear I-V curve was observed for ITO deposited on untreated samples. On the other hand, an I-V curve with linear behavior was observed for plasma-treated samples, indicating the formation of ohmic contacts. From the C-V measurements, it was observed that there was also an increase in the carrier concentration in plasma treated samples compared to untreated samples. This can be attributed to the removal of surface oxide layer present on the GaN surface, and increase in nitrogen vacancies after SiCl 4 plasma treatment. In addition, the increase in nitrogen vacancies at the GaN surface can also enhance localized surface/sub-surface carriers, thereby reducing the contact resistance further.

materials science, multidisciplinary,physics, applied
A Novel Ni/Ag/Pt Ohmic Contact to P-Type GaN for Flip-Chip Light-Emitting Diodes

Ma Hong-Xia,Han Yan-Jun,Shentu Wei-Jin,Zhang Xian-Peng,Luo Yi

DOI: https://doi.org/10.1088/0256-307x/23/8/092

2006-01-01

Abstract:We present a high-quality Ni/Ag/Pt Ohmic contact to p-type GaN. After the sample is annealed at 500°C in O2 ambient for 3 min, a specific contact resistance as low as 2.6×10−5 Ω.cm2 and an optical reflectivity of 82% at 460 nm are obtained. The Auger electron spectroscopy analysis shows that the Pt layer can improve the surface morphology and thermal reliability of the annealed Ag-based electrode, Ag plays a key role in achieving good ohmic contact due to the outdiffusion of Ga into Ag forming Ga vacancies which increase the hole concentration, while the surface contamination of p-type GaN is reduced by Ni.
Effects of Surface Chemical Treatment and Annealing on P-Gan/zno: Ga Contact

WANG Shu-fang,LI Xi-feng,ZHANG Jian-hua

2010-01-01

Chinese Journal of Luminescence

Abstract:ZnO∶Ga(GZO) transparent conductive thin film was deposited on p-GaN acting as the current spreading layer,but it leads to a large contact barrier because of the formation of Schottky contact.However,ohmic contact is of great importance to powered LED.In order to decrease the contact barrier,HCl and NaOH treatment of the p-GaN surface and annealing were employed in this work.The effects of different chemical treatment and annealing on p-GaN/GZO contact property were studied.It is obvious that solutions of alkaline treatment of p-GaN surface can decrease the interfacial barrier,which led to ohmic contact,and the barrier can be lightly increased by annealing.
Thermal Annealing Effect on Mg-doped InGaN/GaN Heterostructures in O2 Ambient

LIU Zhong-tao,HAN Yan-jun,ZHANG Xian-peng,XUE Xiao-lin,CHEN Dong,WANG Lai,LUO Yi

DOI: https://doi.org/10.3969/j.issn.1001-5868.2007.04.015

2007-01-01

Abstract:The effect of the thermal annealing temperature on the electrical and optical properties of Mg-doped InGaN/GaN heterostructures in O 2 ambient was systematically investigated.The current-voltage characteristics and surface sheet resistance measurements show that,compared with p-GaN,the optimum annealing temperature of p-InGaN/GaN heterostructures is lower and the nonalloyed Ni/Au ohmic contacts can be obtained.It is suggested that relative narrower bandgap of InGaN,strong polarization effect in p-InGaN/GaN heterosturctures,and equilibrium vapor pressure of nitrogen over InN higher than that over GaN are the main reasons for the above results.Furthermore,in the photoluminescence spectrum at 10 K of the as-grown p-InGaN/GaN heterostructures,there are two peaks centered at 2.95 eV and 2.25 eV respectively,whose intensities gradually decrease when the thermal annealing temperature increases.To explain the photoluminescence spectra,the recombination mechanism between H-related complex and Mg-acceptor,in which donor-like compensating center play an important role,was proposed.
The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

J. Song,F. J. Xu,Z. L. Miao,S. Huang,Y. Wang,X. Q. Wang,B. Shen,X. B. Qin,B. Y. Wang,X. Q. Shen,H. Okumura

DOI: https://doi.org/10.1088/0022-3727/43/14/145402

2010-01-01

Abstract:The electrical properties of GaN epilayers grown by metal-organic chemical vapour deposition adopting the indium-surfactant method have been investigated by means of Hall measurement, photoluminescence and monoenergetic positron annihilation spectroscopy. The background electron concentration in GaN exhibits a minimum of 5.21 x 10(16) cm(-3) for a trimethylindium (TMIn) flow of 20 mu mol min(-1). The decrease in electron concentration with increasing TMIn flow is likely related to an increase in the density of complex defects involving Ga vacancy (V(Ga)), compensating the electrons. We speculate that the increase in electron concentration at high TMIn flow is caused by the formation of N vacancies (V(N)), acting as shallow donors. Competition between the two mechanisms may determine the variation of electron concentration with increasing TMIn flow. A downward trend in electron mobility with increasing TMIn flow is also observed, which likely results from an increase in concentration of complex defects involving V(Ga) and V(N).
Pd/In/Ni/Au Contact to N-Polar N-Type Gan Fabricated by Laser Lift-Off

J. Ma,Z. Z. Chen,S. Jiang,Q. Q. Jiao,J. Z. Li,S. X. Jiang,Y. L. Feng,T. J. Yu,G. Y. Zhang

DOI: https://doi.org/10.1007/s00339-015-9028-0

2015-01-01

Abstract:Pd/In/Ni/Au contacts to N-polar n-GaN were investigated to obtain low contact resistance and high thermal stability contacts. Two-step thermal annealing method was developed to form the PdIn and InGaN alloys successively, which were clarified by Auger electron spectroscopy and transmission electron microscopy measurements. The lowest specific contact resistivity was achieved as 5.4 × 10−5 Ω cm2 when the sample was annealed under 250 °C for 600 s and 500 °C for 30 s in N2 ambient in sequence. It was observed that Pd/In fusion was occurred at the first annealing step. The PdIn alloy can well act as the blocking layer to prevent the outdiffusion of Ga atoms from n-GaN and low work function material as well. The second annealing step led to some content InGaN formation. PdIn contact to InGaN may get a small Schottky barrier height and some effective electron accumulation at the GaN/InGaN interface, which decreases the specific contact resistivity of Pd/In/Ni/Au to N-polar n-GaN.
Study on the p-type ohmic contact in GaAs-based laser diode

Tao Lin,Jia-nan Xie,Shao-huan Ning,Qing-min Li,Bo Li

DOI: https://doi.org/10.1016/j.mssp.2020.105622

IF: 4.1

2021-03-01

Materials Science in Semiconductor Processing

Abstract:In this paper, the p-GaAs ohmic contact, which is important to improve the conversion efficiency and long-term reliability of high-power optoelectronic devices, was studied. The p-GaAs layer was grown by metal-organic chemical vapor deposition (MOCVD) with a hole concentration of 1.2×1020cm-3, and the metal electrode was fabricated by E-beam evaporation technology based on Ti/Pt/Au metal system. The CTLM tests showed that the p-GaAs contacts were both typical ohmic contact before and after annealing, and the smallest specific contact resistivity of 4.8×10-6Ω·cm2 was obtained after annealing, which mainly due to the direct tunneling effect on the highly doped p-GaAs surface and the formed non-alloy ohmic contact. SEM and EDX analysis showed that the annealing processes used in the n-GaAs metal alloy for laser diode had a little influence on the surface morphology and inter-diffusion of As, Pt, Au elements, while it enhanced the inter-diffusion of Ga and Ti in the contact.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Low-Resistive Ohmic Contacts in High-Electron-Mobility AIN/GaN Heterostructures by Suppressing the Oxygen Incorporation

Liuyun Yang,Jinlin Wang,Shanshan Sheng,Baoqing Zhang,Bowen Sheng,Tao Wang,Fang Liu,Renchun Tao,Fujun Xu,Xuelin Yang,Weikun Ge,Bo Shen,Xinqiang Wang

DOI: https://doi.org/10.1021/acsaelm.2c00585

IF: 4.494

2022-01-01

ACS Applied Electronic Materials

Abstract:AlN/GaN heterostructures are pursued for high-speed and high-power devices due to the superiority of their highmobility and high-density two-dimensional electron gas. However, the Ohmic contacts for high-mobility AlN/GaN heterostructures are difficult to realize, while the reason remains unrevealed. In this article, we reported a low-resistive Ohmic contact in AlN/GaN heterostructures with a high electron mobility of 1510 cm(2) V-1 s(-1) by simply using rapid thermal annealing. Transmission electron microscopy analysis confirms that the incorporation of oxygen is the main impediment for Ohmic contacts, which forms Al2O3 and voids in the interlayers and induces a near-open-circuit contact. By suppressing the incorporation of oxygen, a complete polycrystalline alloy without oxides is achieved, with a low contact resistance of similar to 0.33 Omega.mm as an optimized result. Furthermore, the restrictions for Ohmic contacts in a high-mobility AlN/GaN heterostructure are also clarified, which are ascribed to the lack of an adequate Ti + AlN reaction. Giving a physical model of the contact formation as well as providing improved contact resistance via simplified techniques, this study is indicative of the enhanced functioning of versatile devices.
Light Extraction Efficiency Enhancement of GaN-based Blue LEDs Based on ITO/ InxO Ohmic Contacts with Microstructure Formed by Annealing in Oxygen.

Yi Luo,Yiming Bai,Yanjun Han,Hongtao Li,Lai Wang,Jian Wang,Changzheng Sun,Zhibiao Hao,Bing Xiong

DOI: https://doi.org/10.1364/oe.24.00a797

IF: 3.8

2016-01-01

Optics Express

Abstract:Indium tin oxide (ITO)/ indium oxide (InxO) double layer structure was adopted as the transparent conduction and light scattering function layer to improve the light extraction efficiency of the GaN-based blue LEDs. The double layer structure was first deposited in one run by electron beam evaporation using ITO and Indium as the source respectively, and then annealed in an oxygen environment. This method can fabricate transparent electrode with microstructure and low specific contact resistivity one time free from lithography and etching, which makes the fabrication process simple and at a ower cost. For the 220 nm ITO/ 170 nm InxO double layer sample annealed at 600°C for 15 min in oxygen, measurement results show that its root mean square of roughness of the surface microstructure can be as high as 85.2 nm which introduces the strongest light scattering. Its light transmittance at 450 nm can maintain 92.4%. At the same time, it can realize lower specific contact resistivity with p-InGaN. Compared with the GaN-based blue LEDs with only 220 nm ITO electrode, the light output power of the LEDs with 220 nm ITO/ 170 nm InxO double layer structure can be increased about 58.8%, and working voltage at 20 mA injection current is decreased about 0.23 V due to the enhanced current spreading capability. The light output power improvement is also theoretically convinced by finite difference time domain simulations.
Study on the effect of sputtering pressure on the physical properties of InN films on ITO substrate and the dependence of carrier transport characteristics of Li-doped p-NiO/n-InN heterojunction on the environmental temperature

Zhen He,Haoxuan Huang,Jiahui Huang,Guojiao Xiang,Jinming Zhang,Zhiang Yue,Xian Zhang,Yongqi Wang,Jinwei Ding,Jingzhe Li,Hangyu He,Lukai Wang,Jie Li,Yang Zhao,Hui Wang

DOI: https://doi.org/10.1016/j.vacuum.2023.112833

IF: 4

2023-11-01

Vacuum

Abstract:The exceptional performance of ITO substrate has made it possible to use indium nitride (InN) material in a variety of applications. The combination of lithium-doped NiO and n-type InN in a heterojunction shows great potential as a material for optoelectronic devices. This study investigates the influence of sputtering pressure on the crystal structure, surface morphology, optical properties, and electrical characteristics of InN thin films prepared on ITO substrates through magnetron sputtering. The research findings indicate that the InN films grow preferentially along the (002) crystal plane, with the best crystalline quality observed under a sputtering pressure of 1.5 Pa. Subsequently, the changes in the optical bandgap, transmittance, and reflectance of the InN films with varying sputtering pressure were discussed. The study also discusses a comprehensive analysis of the trends in the electrical characteristics of the InN films with sputtering pressure and environmental temperature, demonstrating their excellent thermal stability at high temperatures. Additionally, Li-doped p-NiO/n-InN heterojunction devices were fabricated and analyzed to determine the influence of environmental temperature on the carrier transport characteristics of the devices, revealing their favorable electrical properties at different temperatures. This research enriches the field of InN material studies and opens up new prospects for the performance and practical applications of InN optoelectronic devices.

materials science, multidisciplinary,physics, applied
Ni/Ag/Pt Ohmic Contacts to P-type GaN

MA Hong-xia,HAN Yan-jun,SHENTU Wei-jin,ZHANG Xian-peng,LUO Yi,QIAN Ke-yuan

DOI: https://doi.org/10.3321/j.issn:1005-0086.2006.06.002

2006-01-01

Abstract:A novel Ni/Ag/Pt(3 nm/120 nm/2 nm)structure used as ohmic contact to p-GaN with high reflectance and low specific contact resistivity(SCR) was presented.After annealed at 500 ℃ in O_2 ambient for 3 min,the SCR with 4.43×10~(-4) Ω·cm~2 and optical reflectance of 80 % at 460 nm were obtained.The root-mean-square(RMS) roughness of the Ni/Ag/Pt sample surface is 10 nm.Auger electronic spectroscope(AES) analysis shows that Ni and Ag are important for ohmic contact,and the surface morphology of Ag-based ohmic contacts is improved by Pt.
The transparent NiO film ohmic contact to p-type and unintentionally doped In0.53Ga0.47As

Dan Yang,Yongqing Huang,Kai Liu,Xiaofeng Duan,Yisu Yang,Xiaomin Ren

DOI: https://doi.org/10.1016/j.mssp.2021.105855

IF: 4.1

2021-08-01

Materials Science in Semiconductor Processing

Abstract:The NiO thin film ohmic contact to the p-type In0.53Ga0.47As and non-doped In0.53Ga0.48As was experimentally demonstrated. The ohmic contact mechanism is mainly due to the small valence band offset between the NiO and InGaAs. The NiO thin film was synthesized through thermal oxidation. The oxidation time is the key factor affecting the contact properties of the NiO/InGaAs. It is promising for the application of NiO transparent electrodes in III-V compound material-based optical-electronic devices.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied

The Effect of p-InGaN layer on ITO based ohmic contacts to p-GaN

TheEffect Ofp-Ingan Layer Onitobasedohmiccontacts Top-Gan

Effects of Surface Treatment on Non-alloyed Ti/Al Ohmic Contact of n-GaN

Highly Reflective Ni/Ag/Pt/Au Ohmic Contacts To P-Gan With Ito Interlayer

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

ITO/AIN/AI ohmic contact for p-GaN with high reliability and optical reflectivity

Ohmic Contacts in GaN-based Devices

Effect of annealing on the properties of indium-tin-oxynitride films as ohmic contacts for gan-based optoelectronic devices

Effect of ITO Interface Modulation Layer on the Performances of LEDs with Ga-doped ZnO Electrode

Indium Tin Oxide (ITO) based Ohmic Contacts on Bulk n-GaN Substrate

A Novel Ni/Ag/Pt Ohmic Contact to P-Type GaN for Flip-Chip Light-Emitting Diodes

Effects of Surface Chemical Treatment and Annealing on P-Gan/zno: Ga Contact

Thermal Annealing Effect on Mg-doped InGaN/GaN Heterostructures in O2 Ambient

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Pd/In/Ni/Au Contact to N-Polar N-Type Gan Fabricated by Laser Lift-Off

Study on the p-type ohmic contact in GaAs-based laser diode

Low-Resistive Ohmic Contacts in High-Electron-Mobility AIN/GaN Heterostructures by Suppressing the Oxygen Incorporation

Light Extraction Efficiency Enhancement of GaN-based Blue LEDs Based on ITO/ InxO Ohmic Contacts with Microstructure Formed by Annealing in Oxygen.

Study on the effect of sputtering pressure on the physical properties of InN films on ITO substrate and the dependence of carrier transport characteristics of Li-doped p-NiO/n-InN heterojunction on the environmental temperature

Ni/Ag/Pt Ohmic Contacts to P-type GaN

The transparent NiO film ohmic contact to p-type and unintentionally doped In0.53Ga0.47As