Abstract:A semi-empirical model is proposed to quantify the tunneling currents through ultrathin gate oxides (1–3.6 nm). As a multiplier to a simple analytical model [1], [2], a correction function is introduced to achieve universal applicability to all different combinations of bias polarities (inversion and accumulation), gate materials (N+, P+, Si, SiGe) and tunneling processes. Each coefficient of the correction function is given a physical meaning and determined by empirical fitting. This new model can accurately predict all the current components that can be observed: electron tunneling from the conduction band (ECB), electron tunneling from the valence band (EVB), and hole tunneling from the valence band (HVB) in dual-gate poly-${\hbox {Si}}_{1-x}{\hbox {Ge}}_{x}$-gated ($x=0$ or 0.25) CMOS devices for various gate oxide thicknesses. In addition, this model can also be employed to determine the physical oxide thickness from $I$–$V$ data with high sensitivity. It is particularly sensitive in the very-thin-oxide regime, where $C$–$V$ extraction happens to be difficult or impossible (because of the presence of the large tunneling current).

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Investigation of Gate Current in Nano-Scale Mosfets by Monte Carlo Solution of Quantum Boltzmann Equation

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Modeling of direct tunneling current through interfacial oxide and high-K gate stacks

Simulation of Ballistic Transport Including S/D Tunneling for DG MOSFET

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Modeling of Gate Tunneling Current for Nanoscale MOSFETs with High-k Gate Stacks

Quantum Modeling of Gate Tunneling Current for Nanoscale MOSFETs