Abstract:The preparation of thin-film transistors (TFTs) with InGaZnO (IGZO) channels using sol–gel technology has the advantages of simplicity in terms of process and weak substrate selectivity. We prepared a series of TFT devices with a top contact and bottom gate structure, in which the top contact was divided into rectangular and circular structures of drain/source electrodes. The field-effect performance of TFT devices with circular pattern drain/source electrodes was better than that with a traditional rectangular structure on both substrates. The uniform distribution of the potential in the circular electrode structure was more conducive to the regulation of carriers under the same channel length at different applied voltages. In addition, with the development of transparent substrate devices, we also constructed a hafnium oxide (HfO2) insulation layer and an IGZO active layer on an indium tin oxide conductive substrate, and explored the effect of circular drain/source electrodes on field-effect properties of the semitransparent TFT device. The IGZO deposited on the HfO2 dielectric layer by spin-coating can effectively reduce the surface roughness of the HfO2 layer and optimize the scattering of carriers at the interface in TFT devices.

The fabrication and study of ZnO-based thin film transistors

The Fabrication of Thin Film Transistors with ZnO As Active Channel Layer

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

Fabrication of Bottom-Gate and Top-Gate Transparent ZnO Thin Film Transistors

Fabrication And Characteristics Of Zno-Based Thin Film Transistors

Transparent Thin-Film Transistors Using ZnMgO as Dielectrics and Channel

High performance reactive sputtering deposited ZnO thin-film transistors on transparent substrate

Study of zinc tin oxide thin-film transistor

Fabrication and performance of indium oxide based transparent thin film transistors

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Fabrication and Comparative Study of Top-Gate and Bottom-Gate ZnO–TFTs with Various Insulator Layers

Synthesis of ZnO Nanowires for Thin Film Network Transistors

Transparent Thin-Film Transistors Based on c-Axis Oriented, Verti cally Aligned ZnO Nanorod Arrays via Solution Pro cessing

Fabrication of ZnO Thin-Film Transistors by L-MBE*

High Performance Rf Sputtering Deposited Zno Thin-Film Transistors

Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns

Performance Enhancement of Fully Transparent Tin-Doped Zinc Oxide Thin-Film Transistors Fabricated by Sputtering at Low Temperature

A Study on the Bottom-gate ITO-stabilized ZnO Thin-Film Transistors

Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate

High-performance Si-doped ZnO Thin-film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature

Enhanced Performance of ZnO Thin-Film Transistors with ZnO Dual-Active-layer