Bending test and bonding mechanism analysis of the SiOx film on aluminum substrate

ZHANG Ji-liang,LI Jian,WO Yin-hua,WANG You-wen,GAN Zheng-hao
DOI: https://doi.org/10.3969/j.issn.1009-6264.2006.01.017
2006-01-01
Abstract:A kind of SiOx film was deposited on aluminum substrate by ambient pressure chemical vapor deposition. The bonding properties were studied by 90 and 180 degrees multi-bending tests. The morphology of the bended surface by scanning electrical microscopy shows that the film is bonded well to the substrate. The fracture process is described as follows: the surface pits and inner vacancies grow and link up to a lot of grooves or ridges, causing breaking down. The results show that there is transition layer in which the bonding energy of Al-O and Si-O is high enough to binding the substrate and surface showing an excellent bonding strength.
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