Effects of Substrate Quality on Fabrication of ZnO Piezoelectric Thin Film by Sol-gel Method

Wang Minrui,Wang Jing,Chen Wen,Chui Yan

DOI: https://doi.org/10.3321/j.issn:1004-132X.2005.z1.112

2005-01-01

Abstract:ZnO piezoelectric thin films were prepared on crystal substrate Si/SiO2/Ti/Pt and uncrystalline substrate Si/SiO2 by sol-gel method. The 002 orientation of ZnO film was measured by X-ray diffraction (XRD). The morphologies, roughness and grains size of ZnO film were investigated by atomic force microscope (AFM). The results show that preferred 002 oriental and smooth ZnO piezoelectric thin films on crystal substrate Si/SiO2/Ti/Pt and uncrystalline substrate Si/SiO2 can all be fabricated by sol-gel method. Due to the smaller lattice mismatch between Pt and ZnO, the annealing temperature for characterizing preferred 002 orientation of ZnO film prepared on substrate Si/SiO2/ Ti/Pt is lower than that for forming 002 orientation of ZnO film on substrate Si/SiO2.