A New Closed-Form Expression For Capacitive Coupling Of Lossy Substrate

Wei Gao,Zhiping Yu
DOI: https://doi.org/10.1109/icsict.2004.1436725
2004-01-01
Abstract:A new closed-form expression has been developed to model capacitive substrate coupling on RF CMOS chips. The electric wall approximation for the oxide-substrate interface is used in the model. The closed-form for single and multiple parallel on-chip interconnects are given. The methodology is applicable to some particular 3D cases.
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