Abstract:In this work we report on the deposition of hydrogenated nanocrystalline silicon carbide (nc-SiC:H) films using an electron cyclotron resonance chemical vapor deposition (ECR-CVD) system with silane (SiH4) and methane (CH4) as source gases. It was found that the conditions of strong hydrogen dilution and high microwave power are necessary for the fabrication of nanocrystalline SiC grains, which are found to be embedded in an amorphous matrix. The films have been studied using high resolution transmission electron microscopy, infrared absorption, Raman scattering and x-ray photoelectron spectroscopy. All the results have confirmed the prescence of SiC nanocrystallites. Very strong photoluminescence (PL) could be observed from these films at room temperature, with a peak energy of 2.64 eV. This energy, being higher than the optical bandgap of 3C-SiC, can be possibly due to quantum size effect in these crystals, which are embedded in an amorphous matrix of larger bandgap. Time-resolved PL at the peak emission energy exhibits a bi-exponential decay process with lifetimes that are in the order of picoseconds and nanoseconds, which are at least 2 orders of magnitude faster than that of bound excition transitions in bulk 3C-SiC at low temperature. The strong light emission and short PL lifetimes observed strongly suggest that the radiative recombination is a result of direct optical transitions in the SiC nanocrystallites. It was found that upon ultraviolet irradiation using an Ar + laser (351 nm), the PL intensity of the films was enhanced. After 20 minutes of irradiation, the PL intensity increased by about three times. This result suggests that the UV light may lead to modification of nonradiative recombination centers in the films.

Study on the Structural and Optic-Electronical Properties of 4h Polytype-Sic Films

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Structure Of Nc-Si : H Films

PREPARATION OF SiC-B4C COMPOSITE FILM AND ITS MECHANICAL AND THERMOELECTRIC PROPERTIES

The Nc-Si Films With Controlled Crystal Structure And Electrical Conductivity Via The Re-Crystallization Approach

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Structural Nature of Nanocrystalline Silicon

Study on structural properties of nanocrystalline silicon films

High-rate, Room-Temperature Synthesis of Amorphous Silicon Carbide Films from Organo-Silicon in High-Density Helicon Wave Plasma

Synthesis of nanostructured SiC films by plasma enhanced chemical vapor deposition with hydrogen diluted hexalmethyldisiloxane as precursor

Study of 3C-Sic and 4H-Sic Films Deposited Using RF Sputtering Method

Chemically Active Plasmas for Deterministic Assembly of Nanocrystalline SiC Film

Growth of Large-Scale Heteroepitaxial 3C-Sic Films and Nanosheets on Silicon Substrates by Microwave Plasma Enhanced Cvd at Higher Powers

Enhancement of the Silicon Nanocrystals’ Electronic Structure within a Silicon Carbide Matrix

SiCx:H and SiCxNy:H Amorphous Films Prepared from Hexamethyldisilane Vapors

The Preparation of Single-Crystal 4H-Sic Film by Pulsed XeCl Laser Deposition

Structural Analysis of Polycrystalline Silicon Thin Films Produced by Two Different ICPCVD Approaches

Homogeneous Nanocrystalline Cubic Silicon Carbide Films Prepared by Inductively Coupled Plasma Chemical Vapor Deposition.

Chemical control of physical properties in silicon nitride films

Controlled-Growth and Characterization of 3C-Sic and 6H-Sic Films on C-Plane Sapphire Substrates by Lpcvd

DEPOSITION OF HYDROGENATED NANOCRYSTALLINE SILICON CARBIDE BY ECR-CVD