Abstract:Gate oxide breakdown (OBD) is a key factor limiting the useful lifetime of an integrated circuit. Unfortunately, the conventional approach for full chip OBD reliability analysis assumes a uniform oxide thickness and worst-case temperature for all devices. In practice, however, gate oxide thickness varies from die-to-die and within-die and hence may cause different reliability for different devices even chips. Moreover, due to the increased across-die temperature variation, such difference may be exacerbated. Thus, as the precision of variation control worsens, an alternative reliability analysis approach is needed. In this paper, we propose a statistical framework for chip-level gate OBD reliability analysis while considering both die-to-die and within-die components of thickness variations as well as the across-die temperature variation. The thickness of each device is modeled as a distinct random variable and thus the full chip reliability estimation problem is defined on a huge sample space of several million devices. We observe that the chip-level OBD reliability function is independent of the relative location of the individual devices. This enables us to transform the problem such that the resulting representation can be expressed in terms of much fewer random variables. Using this transformation, we present a computationally efficient and accurate approach for estimating the full chip reliability while considering spatial correlations of gate oxide thickness as well as temperature variation. We show that, compared to Monte Carlo simulation, the proposed method incurs an error of only around 1% while improving the runtime by more than three orders of magnitude.

Study on Parameter Characterization of Thin Gate Oxide Tddb Breakdown

Substrate and process dependence of gate oxide reliability of dual gate CMOS process

Physical Study of Low-frequency TDDB Lifetime Deterioration in Advanced FinFETs

Substrate and Process Dependence of Gate Oxide Reliability of 0.18μm Dual Gate CMOS Process

TDDB Characteristics of Ultra-Thin HfN/HfO/sub 2/ Gate Stack

GHz AC to DC TDDB Modeling with Defect Accumulation Efficiency Model

Off-state Avalanche-Breakdown-induced On-Resistance Degradation in SGO–NLDMOS

A Thorough Study of Quasi-Breakdown Phenomenon of Thin Gate Oxide in Dual-Gate CMOSFET's

Process Variation and Temperature-Aware Full Chip Oxide Breakdown Reliability Analysis.

Electrical Characteristics of 3-6nm Ultra-Thin Gate Oxide

The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection

Impact of Electrical Stress on Defect Generation in Thin GeO<sub>2</sub>/Ge Gate Stacks Fabricated by Thermal Oxidation

Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs

Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

Breakdown Characteristics of N2O-Annealed H2-O2 Grown Thin Gate Oxide

Electrical Signature of the Defect Associated with Gate Oxide Breakdown

Localized Breakdown in Dielectrics and Macroscopic Charge Transport Through the Whole Gate Stack: A Comparative Study

Study on Ultra-Thin Gate Dielectrics: Surface Preparation and Reliability

Series Resistance Effect on Time Zero Dielectrics Breakdown Characteristics of MOSCAP with Ultra-Thin EOT High-K/metal Gate Stacks

The Gate Oxide Breakdown Failures of 4H-Sic MOS Devices

Breakdown Characteristics of HfO2 Gate Dielectrics Films Under Constant Current Stress