Abstract:Using plasma enhanced chemical vapor deposition system, intrinsic hydrogenated nanocrystalline silicon films and P-doped ones have been fabricated. The dependence of Raman shift on the grain size and doping concentration has been systematically studied. The results show that both the decrease in grain size and the increase in doping concentration can make the peak-position of TO band for silicon grains deviate gradually from the value obtained by phonon confinement model. The deviation is attributed to the strain, impurities and defects inside the grains due to the finite grain size or doping. In addition, the relative scattering intensities of TA and LA increase when the grain size decreases or the doping concentration increases. The main reason may be that the finite grain size and doping destroy the lattice translational symmetry, which makes the selection role of the Raman scattering relaxed, and therefore increases the scattering possibility of the TA and LA models.

Raman Spectra of Nanocrystalline Silicon Films