Abstract:For silicon carbide (SiC) processed by ion-implantation, dedicated test structure fabrication or destructive sample processing on test wafers are usually required to obtain depth profiles of electrical characteristics such as carrier concentration. In this study, a rapid and non-destructive approach for depth profiling is presented that uses confocal Raman microscopy. As an example, a 4H–SiC substrate with an epitaxial layer of several micrometers thick and top layer in nanoscale that was modified by ion-implantation was characterized. From the Raman depth profiling, longitudinal optical (LO) mode from the epitaxial layer and longitudinal optical phonon-plasmon coupled (LOPC) mode from the substrate layer can be sensitively distinguished at the interface. The position profile of the LOPC peak intensity in the depth direction was found to be effective in estimating the thickness of the epitaxial layer. For three kinds of epitaxial layer with thicknesses of 5.3 μm, 6 μm, and 7.5 μm, the average deviations of the Raman depth analysis were −1.7 μm, −1.2 μm, and −1.4 μm, respectively. Moreover, when moving the focal plane from the heavily doped sample (~1018 cm−3) to the epitaxial layer (~1016 cm−3), the LOPC peak showed a blue shift. The twice travel of the photon (excitation and collection) through the ion-implanted layer with doping concentrations higher than 1 × 1018 cm−3 led to a difference in the LOPC peak position for samples with the same epitaxial layer and substrate layer. Furthermore, the influences of the setup in terms of pinhole size and numerical aperture of objective lens on the depth profiling results were studied. Different from other research on Raman depth profiling, the 50× long working distance objective lens (50L× lens) was found more suitable than the 100× lens for the depth analysis 4H–SiC with a multi-layer structure.

Carrier depth profile of Si/SiGe/Si n-p-n HBT structural materials characterized by electrochemical capacitance-voltage method

Characteristics of I(A-Si-H)/N+(Mc-Si-H) Junctions and Electron-Transport in P-Doped Mc-Si-H Films

UHV/CVD i-Si epitaxy and ion implantation doping for sub-micrometer N -Collector of SiGeHBT

Epitaxy of SiGe HBT Structure by High Vacuum/Rapid Thermal Processing／Chemical Vapor Deposition

Transmission electron microscopy and secondary ion mass spectrometry study of n-Si/i-p+-i SiGe/n-Si structures grown by ultrahigh vacuum chemical vapor deposition

Doping And Growth Of Thin Si Epilayer And Sige By Uhv/Cvd

Determination of Ge Fraction and Carrier Concentration in Si<sub>1-X</sub>Ge<sub>x</sub>/Si by Capacitance-Voltage Method

Electrochemical Capacitance-Voltage Characterization of Plasma-Doped Ultra-Shallow Junctions

Differential Hall Profiling of Ultra-Shallow Junctions Formed by Plasma Doping and Ion Implantation

Disclosing the carrier distributions in ion-implanted HgCdTe p–n junctions with scanning capacitance microscopy

Characterizations on the Doping of Single-Crystal Silicon Carbide

Carrier lifetime studies in diode structures on Si substrates with and without Ge doping

A Study of Electrical Characteristics for Boron Implantation of Mbe Grown Hgcdte

Heavily Carbon-Doped Gaas Grown by Movpe Using Carbon Tetrabromide for Hbts

UHV/CVD n--type silicon epitaxy used for SiGe HBT device

ECV profiling of ultra-shallow junction formed by plasma doping

Depth Profiling of Ion-Implanted 4H–SiC Using Confocal Raman Spectroscopy

C-V Profiling of Ultra-Shallow Junctions Using a Buried Layer with Stepped Doping

Cross-Sectional Transmission Electron Microscopy Study of Si/Sige Heterojunction Bipolar Transistor Structure Grown by Ultra-High Vacuum Chemical Vapor Deposition

Carrier transport in LPCVD grown Ge-doped β -Ga2O3/4H-SiC isotype heterojunction

Mercury Cadmium Telluride Implanted Junction Profile Measurement And Depth Control