Abstract:Silicon carbide (SiC) is an important semiconductor material for fabricating power electronic devices that exhibit higher switch frequency, lower energy loss and substantial reduction both in size and weight in comparison with its Si-based counterparts1-4. Currently, most devices, such as metal-oxide-semiconductor field effect transistors, which are core devices used in electric vehicles, photovoltaic industry and other applications, are fabricated on a hexagonal polytype 4H-SiC because of its commercial availability5. Cubic silicon carbide (3C-SiC), the only cubic polytype, has a moderate band gap of 2.36 eV at room-temperature, but a superior mobility and thermal conduction than 4H-SiC4,6-11. Moreover, the much lower concentration of interfacial traps between insulating oxide gate and 3C-SiC helps fabricate reliable and long-life devices7-10,12-14. The growth of 3C-SiC crystals, however, has remained a challenge up to now despite of decades-long efforts by researchers because of its easy transformation into other polytypes during growth15-19, limiting the 3C-SiC based devices. Here, we report that 3C-SiC can be made thermodynamically favored from nucleation to growth on a 4H-SiC substrate by top-seeded solution growth technique(TSSG), beyond what's expected by classic nucleation theory. This enables the steady growth of quality and large sized 3C-SiC crystals (2~4-inch in diameter and 4.0~10.0 mm in thickness) sustainable. Our findings broaden the mechanism of hetero-seed crystal growth and provide a feasible route to mass production of 3C-SiC crystals,offering new opportunities to develop power electronic devices potentially with better performances than those based on 4H-SiC.

Physical properties, bulk growth, and applications of SiC single crystal

Progress in Research on Wide Band-Gap Semiconductor SiC and Its Application

One-dimensional SiC Nanostructures: Designed Growth, Properties, and Applications

Recent Progress on Single-Crystal Growth and Epitaxial Growth of 4H Silicon Carbide

Review of SiC crystal growth technology

A review of the simulation studies on the bulk growth of silicon carbide single crystals

Influence of molecule size on its transport properties through a porous medium.

Characterizations on the Doping of Single-Crystal Silicon Carbide

Pvt Growth of 6h Sic Crystals and Defect Characterization

High quality and wafer-scale cubic silicon carbide single crystals

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

The Fracture Stress of 8-Inch Silicon Carbide During the PVT Growth

Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

In-situ and ex-situ Characterizations of PVT-grown 4H-SiC Single Crystals

Review of solution growth techniques for 4H-SiC single crystal

Improvement of surface morphology by optimizing the growth conditions in solution growth of SiC single crystal

Optimization of thermal field of 150 mm SiC crystal growth by PVT method

Recent progress in synthesis, properties and potential applications of SiC nanomaterials