Abstract:Nitrogenated tetrahedral amorphous carbon (ta-C : N) films were prepared on the polished C--Si substrates by introducing highly pure nitrogen gas into the cathode region and the depositing chamber synchronously using filtered cathodic vacuum arc (FCVA) technology. The nitrogen content in the films was controlled by changing the flow rate of nitrogen gas. The configuration of ta-C : N films was investigated by means of X-ray photoelectron spectroscopy (XPS) and visible Raman spectroscopy. It was shown that the nitrogen content in the films increased from 0.84 at% to 5.37 at% monotonously when the nitrogen flow rate was varied from 2 seem to 20 sccm. The peak position of C (1s) core level moved towards higher binding energy with the increase in nitrogen content. The shift of C (1s) peak position could be ascribed to the chemical bonding between carbon and nitrogen atoms even though more three-fold coordinated sp2 configuration as in graphite was formed when the films were doped with more nitrogen atoms. Additionally, the half width of C(1s) peak gradually was also broadened with increasing nitrogen content. In order to discover clearly the changing regularities of the microstructure of the films, the XPS C(1s) spectra and Raman spectra were deconvoluted using a Gaussian-Lorentzian mixed lineshape. It was shown that the tetrahedral hybridization component was still dominant even though the ratio of sp2/sp3 obtained from C(1s) spectra rose with the increase in nitrogen content. The Raman measurements demonstrated that the G peak position shifted towards higher frequency from 1,561 to 1,578 cm(-1) and the ratio of ID/IG also rose with the increase in nitrogen content. Both results indicated that the graphitizing tendency could occur with the increase in nitrogen content in the films.

STUDY ON THE STRUCTURE OF A-C∶h(n) FILMS BY XPS

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Studies of Cn<sub>1</sub> Films Deposited by Ion-Beam-Assisted Laser Ablation of Graphite

Nitrogen Modification of Hydrogenated Amorphous Carbon Films

Investigation of carbon nitride films by cathodic arc evaporation

The microstructural dependence of the opto-electronic properties of nitrogenated hydrogenated amorphous carbon thin films

Electron energy loss spectroscopy of amorphous carbon nitride

Substitutional Nitrogen Doping of Tetrahedral Amorphous Carbon

XPS and Raman Spectral Analysis of Nitrogenated Tetrahedral Amorphous Carbon(ta-C:N)Films with Different Nitrogen Content

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Investigation into the Characteristics of A-C: H Films Radiated by an Electron Beam

Studies Of Cnx Films Deposited By Ion-Beam-Assisted Laser Ablation Of Graphite

STRUCTURAL ANALYSIS OF SiCN FILM PREPARED BY REACTIVE SPUTTERING

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Correlation Between Structure and Hardness of Magnetron Sputtering Deposited CNx Films

The Structure of Boron-, Phosphorus- and Nitrogen-Doped Tetrahedral Amorphous Carbon Deposited by Cathodic Arc

Synthesis and Characterization of C 3 N 4 Hard Films

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Characterization of sp2/sp3 hybridization ratios of hydrogenated amorphous carbon films deposited in C2H2 inductively coupled plasmas