Analysis of the microstructure of laser crystallized hydrogenated amorphous silicon films by spectroscopic ellipsometry

Yongbing Dai,Zhongyang Xu,Churong Li,Chang'an Wang,Shaoqiang Zhang,Chengwu An,Hui Ding,Xingjiao Li

1998-01-01

Abstract:Hydrogenated amorphous silicon (a-Si:H) films were crystallized by the irradiation of a XeCl excimer laser. The ellipsometric spectra of crystallized films was measured. By using a multilayer model and Bruggeman effective medium approximation (B-EMA), the microstructure of crystallized films was analyzed. The results have shown that for low energy density, a crystallized layer is characterized by the EMA mixture containing a-Si:H; for high energy density, the crystallized layer is characterized by the EMA mixture containing no a-Si:H. An intermixing layer has been formed between crystallized film and substrate. By using the Si depth profile obtained by fitting ellipsometry spectra data, the 3-D surface morphology of crystallized film can be reconstructed.