Abstract:This paper investigates the capacitance–voltage (C–V) measurement on fully silicided (FUSI) gated metal-oxide-semiconductor (MOS) capacitors and the applicability of MOS capacitor models. When the oxide leakage current of an MOS capacitor is large, two-element parallel or series model cannot be used to obtain its real C–V characteristic. A three-element model simultaneously consisting of parallel conductance and series resistance or a four-element model with further consideration of a series inductance should be used. We employed the three-element and the four-element models with the help of two-frequency technique to measure the Ni FUSI gated MOS capacitors. The results indicate that the capacitance of the MOS capacitors extracted by the three-element model still shows some frequency dispersion, while that extracted by the four-element model is close to the real capacitance, showing little frequency dispersion. The obtained capacitance can be used to calculate the dielectric thickness with quantum effect correction by NCSU C–V program. We also investigated the influence of MOS capacitor's area on the measurement accuracy. The results indicate that the decrease of capacitor area can reduce the dissipation factor and improve the measurement accuracy. As a result, the frequency dispersion of the measured capacitance is significantly reduced, and real C–V characteristic can be obtained directly by the series model. In addition, this paper investigates the quasi-static C–V measurement and the photonic high-frequency C–V measurement on Ni FUSI metal gated MOS capacitor with a thin leaky oxide. The results indicate that the large tunneling current through the gate oxide significantly perturbs the accurate measurement of the displacement current, which is essential for the quasi-static C–V measurement. On the other hand, the photonic high-frequency C–V measurement can bypass the leakage problem, and get reliable low-frequency C–V characteristic, which can be used to evaluate whether the full silicidation has completed or not, and to extract the interface trap density of the SiO2/Si interface.

Effects of distributed capacitance on CCLL based MOSFET-C integrated continuous-time bandpass filter

Comparative study on the characteristics among few-walled carbon nanotube array field-effect transistors

Wideband Description of the Finite-Ground Coplanar Waveguide-Type Structures with Discontinuities

Experimental Characterization of On-Chip Inductor and Capacitor Interconnect: Part I. Series Case

Electrical Modeling of Multi-Walled Carbon Nanotube (Mwcnt)-Based Capacitors for High-Density RF Integration

A Parameter Design Method for High Performance LCLC-LC Compensated CPT Systems

Delay and Power Evaluation of Negative Capacitance Ferroelectric Mosfet Based on Spice Model

Physical Analysis and Modeling of the Nonlinear Miller Capacitance for SiC MOSFET.

Analytical Gate Fringe Capacitance Model for Nanoscale MOSFET with Layout Dependent Effect and Process Variations

Notice of Retraction: A Novel Coplanar Common-Mode Filter with a Wide Stopband

Design Guidelines for Y Capacitance Based on CM Noise Caused by Line Frequency Switch of Totem-Pole PFC

A Simple Input Filter Capacitance (IFC) Current Compensation Scheme for CRM Totem-Pole PFC with Si MOSFETs at 800 Hz Line Frequency

Frequency-dependent resistive and capacitive components in RF MOSFETs

Monte Carlo study of coaxially gated CNTFETs: capacitive effects and dynamic performance

A physics-based analytical surface potential and capacitance model of MOSFET's operation from accumulation to depletion region

Effects of gate to drain capacitance to the AC characteristics of trench power MOSFET

The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET

A Discretization Approach to Modeling Capacitive MEMS Filters

A Charge-Based Intrinsic Capacitance Model For Thin-Film Soi Short-Channel Mosfet

Capacitance–voltage Characterization of Fully Silicided Gated MOS Capacitor

Design of a RF MEMS Passive LC Filter