Abstract:The nanowire gate-all-around (GAA) structures with the nearly ultimate channel electrostatic integrity of the gate field can exhibit the best immunity to the short channel effect and drain-induced barrier lowering. Moreover, owing to the enhanced control efficiency of gate over the tunneling junction, the GAA-TFET also gives improved subthreshold swing and on-state current. Despite the excellent device performance, an accurate model is very significant for the practical application. Compared with the numerical methods which are usually time consuming and computationally inefficient, an analytical model could accelerate the device investigation and circuit design process. Even though some tunneling current models have already been reported for nanowire tunneling field-effect-transistors (TFETs), the model of the terminal capacitance is still an issue for nanowire TFETs. The capacitance is of great significance for the transient simulation. In this paper, a physical and analytical potential model considering both the source depletion region and the channel mobile charges, is developed for the GAA-TFETs. The results from the model are verified with the numerical simulations, and the excellent agreement between the two results indicates the validation of the proposed model. Based on the potential model, the terminal charge model and the capacitance model are further developed and also verified by the numerical simulations. The main inflection and variation of the terminal charges and capacitances with the biases can be predicted by our model. Besides, both the model results and the numerical simulations both demonstrate that the gate charge is dominated mainly by the drain charges and the contribution of the source charges can be almost neglected. This also leads to the very small gate-source capacitance and very large Miller capacitance in the TFET device. This will be detrimental to the performance of TFET-based digital circuits but can be mitigated with the hetero-oxide gate structure. The second order effects, such as the quantum confinement and traps, are ignored in this paper and can be taken into the core model in the future work. It should also be noted that there is no iterative process involved during the model derivation, thus the developed model can be easily applied to the widely used SPICE platform and will be useful in designing and investigating the GAA-TFET based circuits.

Frequency-dependent resistive and capacitive components in RF MOSFETs

Scalable RFCMOS Model for 90 Nm Technology

Wideband Description of the Finite-Ground Coplanar Waveguide-Type Structures with Discontinuities

An Improved RF MOSFET Model Accounting Substrate Coupling among Terminals

High-frequency small signal AC and noise modeling of MOSFETs for RF IC design

MOSFET Modeling for RF IC Design

Analytical Gate Fringe Capacitance Model for Nanoscale MOSFET with Layout Dependent Effect and Process Variations

Advanced MOSFET Modeling for RF IC Design

MOS transistor modeling for RF IC design

Capacitance Model for Nanowire Gate-All-around Tunneling Field-Effect-transistors

A High-Frequency MOS Transistor Model and its Effects on Radio-Frequency Circuits

An MOS transistor model for RF IC design valid in all regions of operation

Temperature Dependence of On-State Inter-Terminal Capacitances (Cgd and Cgs) of SiC MOSFETs and Frequency Limitations of their Measurements

Accurate and Computationally Efficient Modeling of Nonquasi Static Effects in MOSFETs for Millimeter-Wave Applications

Effects of gate to drain capacitance to the AC characteristics of trench power MOSFET

Small-signal non-quasi-static model of a multi-fin FinFET for analog and linearity analysis: the role of gate resistance

High Frequency Performance of Nano-Scale Ultra-Thin-body Schottky-barrier N-Mosfets

Tunneling Field-Effect Transistor: Capacitance Components and Modeling

Modeling of Gate Current and Capacitance in Nanoscale-MOS Structures