Abstract:Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short - channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. It is revealed that hetero - material - gate and lightly doped drain and source CNTFET (HMG - LDDS - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of Phi(M1)/Phi(M2) have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product (PDP). In addition, we discuss and compare the CNTFET-based circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS - HMG - CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.

Effects of gate to drain capacitance to the AC characteristics of trench power MOSFET

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Quantum Transport Study of Si Ultrathin-Body Double-Gate Pmosfets: ${I}$ – ${V}$ , ${C}$ – ${V}$ , Energy Delay, and Parasitic Effects

Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs

High-speed power MOSFET with low reverse transfer capacitance using a trench/planar gate architecture

Channel Density Design Guidelines for the Transient Characteristics of SiC Trench Gate MOSFETs

Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example

Effect of the Dummy Gate on the Capacitance Characteristics of the Ldmosfets

The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET

Gate/Drain Coupled Barrier Lowering Effect and Negative Threshold Voltage Shift in Schottky-Type P-Gan Gate HEMT

Physical Investigation of Subthreshold Swing Degradation Behavior in Negative Capacitance FET

Capacitance Characteristics of the Mos Structure with Fowler-Nordheim Tunneling Current

The Failure Mechanism of Gate Resistance Testing for Power MOSFET

Low Switching Loss and Increased Short-Circuit Capability Split-Gate SiC Trench MOSFET with p-type pillar

4H-Sic Trench Gate Lateral MOSFET with Dual Source Trenches for Improved Performance and Reliability

Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs

Investigation of Hetero - Material - Gate in CNTFETs for Ultra Low Power Circuits

Analytical Gate Fringe Capacitance Model for Nanoscale MOSFET with Layout Dependent Effect and Process Variations

Effects of Parasitic Capacitance on Both Static and Dynamic Electrical Characteristics of Back-Gated Two-Dimensional Semiconductor Negative-Capacitance Field-Effect Transistors

Effects of High Gate Voltage Stress on Threshold Voltage Stability in Planar and Trench SiC Power MOSFETs

Channel and Gate Workfunction-Engineered CNTFETs for Low-Power and High-Speed Logic and Memory Applications