Abstract:In this letter, trench-gate metal–oxide–semiconductor field-effect transistors on (010) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga 2 O 3 epitaxial layer are fabricated. Enhancement mode is achieved by the gate-recess process, through thoroughly depleting the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga 2 O 3 channel to get a positive threshold voltage. For the first time, by using a dynamic parameter test system, the Ga 2 O 3 MOSFET with 2- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> gate length is characterized to present short switching time, including turn-on time ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit {t}_{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula> ) of 28.6 ns and turn-off time ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit {t}_{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula> ) of 94.0 ns. In addition, OFF-state interelectrode parasitic capacitances, including input capacitance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit {C}_{\text {iss}}$ </tex-math></inline-formula> ) of 37 pF/mm, output capacitance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit {C}_{\text {oss}}$ </tex-math></inline-formula> ) of 42 pF/mm, and reverse transfer capacitance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit {C}_{\text {rss}}$ </tex-math></inline-formula> ) of 14 pF/mm are also obtained, which can account for the high switching speed. The static and dynamic switching properties of the trench-gate device show the potential of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga 2 O 3 MOSFET for the high-speed switching applications.

High-speed power MOSFET with low reverse transfer capacitance using a trench/planar gate architecture

Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges

A New SiC Trench MOSFET Structure With Protruded p-Base for Low Oxide Field and Enhanced Switching Performance

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A New Trench-Planner Gate Mosfet Structure

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SiC Trench MOSFET with Reduced Switching Loss and Increased Short-Circuit Capability

Fast Switching <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Power MOSFET With a Trench-Gate Structure

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Novel SiC Trench MOSFET with Improved Third-Quadrant Performance and Switching Speed

Effects of gate to drain capacitance to the AC characteristics of trench power MOSFET

An Improved 4H-SiC Trench-Gate MOSFET With Low ON-Resistance and Switching Loss

A Novel Planar InAs/Si Hetero-TFET with Buried Drain Design and Face-tunneling Technique

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A New 4H-SiC Trench MOSFET With Improved Reverse Conduction, Breakdown, and Switching Characteristics

A New Shallow Trench and Planar Gate Mosfet Structure Based on Vdmos Technology

Integrated Junction Barrier Schottky Diode and MOS-Channel Diode in SiC Planar MOSFETs for Optimization of Reverse Performances

SiC Trench MOSFET with Depletion-Mode pMOS for Enhanced Short-Circuit Capability and Switching Performance

An Adjustable P-Region Potential SiC Trench MOSFET With Improved High-Frequency and Short-Circuit Performance

Theoretical Analysis and Experimental Characterization of 1.2-kV 4H-SiC Planar Split-Gate MOSFET With Source Field Plate