Abstract:In this letter, trench-gate metal–oxide–semiconductor field-effect transistors on (010) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga 2 O 3 epitaxial layer are fabricated. Enhancement mode is achieved by the gate-recess process, through thoroughly depleting the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga 2 O 3 channel to get a positive threshold voltage. For the first time, by using a dynamic parameter test system, the Ga 2 O 3 MOSFET with 2- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> gate length is characterized to present short switching time, including turn-on time ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit {t}_{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula> ) of 28.6 ns and turn-off time ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit {t}_{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula> ) of 94.0 ns. In addition, OFF-state interelectrode parasitic capacitances, including input capacitance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit {C}_{\text {iss}}$ </tex-math></inline-formula> ) of 37 pF/mm, output capacitance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit {C}_{\text {oss}}$ </tex-math></inline-formula> ) of 42 pF/mm, and reverse transfer capacitance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit {C}_{\text {rss}}$ </tex-math></inline-formula> ) of 14 pF/mm are also obtained, which can account for the high switching speed. The static and dynamic switching properties of the trench-gate device show the potential of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga 2 O 3 MOSFET for the high-speed switching applications.

Fast Switching <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Power MOSFET With a Trench-Gate Structure

Effective Suppression of MIS Interface Defects Using Boron Nitride Toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3

702.3 A·cm⁻²/10.4 Mω·cm² Β-Ga₂o₃ U-Shape Trench Gate MOSFET with N-Ion Implantation

Trench Gate β-Ga2O3 MOSFETs: A Review

Design And Fabrication Of Field-Plated Normally Off Beta-Ga2o3 Mosfet With Laminated-Ferroelectric Charge Storage Gate For High Power Application

Normally-Off-$\beta$ -Ga2o3 Power MOSFET with Ferroelectric Charge Storage Gate Stack Structure

702.3 A.cm(-2)/10.4 m Omega.cm(2) Vertical beta-Ga2O3 U-Shape Trench Gate MOSFET With N-Ion Implantation

High-speed power MOSFET with low reverse transfer capacitance using a trench/planar gate architecture

High <inline-formula> <tex-math notation="LaTeX">${I}_{\text{ON}}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${I}_{\text{ON}}$ </tex-math></inline-formula>/<inline-formula> <tex-math notation="LaTeX">${I}_{\text{OFF}}$ </tex-math></inline-formula> Ratio Enhancement

High ${I}_{\text{ON}}$ and ${I}_{\text{ON}}$ / ${I}_{\text{OFF}}$ Ratio Enhancement-Mode Buried ${p}$ -Channel GaN MOSFETs on ${p}$ -GaN Gate Power HEMT Platform

All-WBG Cascode Device with p-GaN Gate HEMT and SiC JFET for High-Frequency and High-Temperature Power Switching Applications

Al<sub>2</sub>O<sub>3</sub>-Dielectric InAlN/AlN/GaN <inline-formula> <tex-math notation="LaTeX">${\Gamma}$ </tex-math></inline-formula>-Gate MOS-HFETs With Composite Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub> Passivation Oxides

Enhancement-mode Β-Ga2o3 U-shaped Gate Trench Vertical MOSFET Realized by Oxygen Annealing

Design of Ga 2 O 3 Trench Gate MOSFET Devices with Dielectric Pillars

A Novel Kilovolts GaN Vertical Superjunction MOSFET With Trench Gate: Approach for Device Design and Optimization

Source-Field-Plated Β-Ga2o3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2

Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field

Design of Enhancement Mode β-Ga2O3 Vertical Current Aperture MOSFETs With a Trench Gate

Investigations on In0.12Al0.88N/AlN/AlxGa1−xN/In0.12Al0.88N MOS-HFETs With Symmetrically-Graded Wide-Gap Channel and Drain Field-Plate Design