Abstract:Electrochemical etching of silicon carbide (SiC) material has received increasing attention in recent years, due to its simple procedure, low cost and significance in the exploration of novel optoelectronic devices. In this paper, 4H-SiC substrates were electrochemically etched at a constant current density of 392.98 mA cm-2 in an electrolyte made up of hydrofluoric acid and deionized water. The layering of a SiC porous layer and periodic fluctuation of the voltage were witnessed for the first time, with the layering phenomenon corresponding well to the voltage period. However, no such phenomenon was observed when the SiC substrates were anodic etched under the same conditions with magnet stirring. As a result, the periodic variation of voltage was hypothesized to be the cause of regular layering during constant current electrochemical etching. Electrochemical etching in potentiostatic mode was thus performed at different voltages. We found that the diameter of the SiC nanopores increased while the thickness of the sidewall decreased with the increasing voltage. Based on the experimental findings, a model of mass transport was proposed. The mass transport process leads to periodic changes in resistance, hence the periodic change in voltage. This successfully explained the reason for the layering. Furthermore, SiC substrates were also electrochemically etched at high and low current densities, finding the existence of a threshold current density for the occurrence of the layering. Energy dispersive x-ray spectroscopy analysis showed that the composition of the SiC porous layer remained unchanged compared to the pure SiC wafer, implying that the peeling-off of the SiC porous layer obtained by electrochemical etching can be directly adopted for use on devices requiring a SiC porous structure.

I-V characterization study of porous silicon formation by doubled-cell electrochemical etching

The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

Porous silicon formation and electropolishing

Al-assisted Anodic Etched Porous Silicon

A novel method of fabricating porous silicon material: ultrasonically enhanced anodic electrochemical etching

Systematic Study on Pulse Parameters in Fabricating Porous Silicon-Layered Structures by Pulse Electrochemical Etching

Optimization of Metal-Assisted Etchant Components for Fabrication of Porous Silicon

Influence of Polarized Bias and Porous Silicon Morphology on the Electrical Behavior of Au-porous Silicon Contacts

Optimization of anodic current density for growth of thick p-type macropore porous silicon

Exploring the Influence of Solvents on Electrochemically Etched Porous Silicon Based on Photoluminescence and Surface Morphology Analysis

Reflectivity of porous-pyramids structured silicon surface

Morphological and Electrical Features of Porous Silicon Prepared by Metal-Induced Chemical Etching

Studies on microstructure and photoluminescence property of porous silicon

The Influence of Microstructure on Optical Properties of Porous Silicon

Porous Si (111) Fabrication Using Electrochemical Anodization: Effects of Electrode Distance and Current Density

Further Evidence for the Quantum Confined Electrochemistry Model of the Formation Mechanism of P−-Type Porous Silicon

Atomic Force Microscopic Studies of Light-Emitting Porous Silicon

Large-scale Fabrication, 3D Tomography, and Lithium-Ion Battery Application of Porous Silicon.

Study of Optical Properties of Porous Silicon Produced by Metal-Aid

Study on the layering phenomenon of SiC porous layer fabricated by constant current electrochemical etching

Photo-electrochemical Etching of Macroporous Silicon Arrays Used in Silicon Microchannel Plates