Abstract:Nickel monosilicide (NiSi) has emerged as an excellent material of choice for source-drain contact applications below 45 nm node complementary metal-oxide-semiconductor (CMOS) technology. We have investigated the formation of nanoscale NiSi by ion irradiation of Si (~5 nm)/Ni(~15 nm)/Si, grown under ultrahigh vacuum environment. Irradiation was carried out at room temperature with 1 MeV Si+ ions. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were employed for analysis. With increasing ion fluence ion beam mixing occurs and more and more Si is incorporated into the Ni layer and this layer gets amorphized. At an even higher fluence a recrystallized uniform nickel monosilicide ({\eta}-NiSi) layer is formed. Several planar spacings of different Miller indices of {\eta}-NiSi have been observed in XRD and TEM. Additionally, an oscillatory amorphization and recrystallization has been observed in the substrate Si with increasing ion fluence. To our knowledge, this has never been observed in ion irradiation of bare Si in decades of work in this area. The oscillatory amorphization/recrystallization in Si is apparently Ni-induced. Irradiation displaces Ni and produces a distribution of Ni in amorphized Si. Irradiation at a higher fluence produces two recrystallized Si bands in amorphous Si with concomitant accumulation of Ni at the amorphous/crystalline interfaces. On further increase of irradiation fluence the recrystallized Si bands again pass through amorphization and recrystallization. The total thickness of recrystallized as well as amorphous Si shows an oscillatory behavior as a function of ion fluence.

Study on Surface Morphology and Optical Absorption Properties of Ni Ions Implanting SiO2

Nickel Induced Crystallization of Amorphous Silicon Thin Films

PREPARATION OF NiO NANOPARTICLES ON THE SILICA SURFACE BY ADSORPTION PHASE SYNTHESIS AND ITS REGULATION ON MORPHOLOGY OF NiO PARTICLES

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

Nanoscale η-NiSi formation via ion irradiation of Si/Ni/Si

The study of nickel-induced enhancement of near-infrared luminescence in Si-rich silicon oxide films

Amorphization Implant Technology in NiSi SALICIDE Process

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Spectral Properties of Ni+-implanted Single Crystals α-Al2O3

Nickel-Induced Enhancement of Photoluminescence from Si-Rich Silica Films

Nickel Induced Phase Separation and Nanocrystal Growth in Si-Rich Silica Films

Research on Nickel Induced Silicon Nanocrystal Growth

Synthesis and Characterization of Amorphous SiO2 Nanowires Via Pulsed Laser Deposition Accompanied by N2 Annealing

A Study of the Correlation Between Ultraviolet and Infrared Emission in Ni-doped SiOxfilms

Investigation of Ni Reaction with Sputtered Amorphous Sige Thin Film on Sio2 Substrate

NiPt silicide agglomeration accompanied by stress relaxation in NiSi(010) ∥ Si(001) grains

Study of NiSi/Si Interface by Cross-Section Transmission Electron Microscopy

Formation of Optical Waveguide and Annealing Behaviour of LiNbO 3 Implanted by 3.0-Mev Nickel Ions

Low temperature ion beam synthesis of NiSi2 layers with fine electrical property

Pattern Evolution of NiSi2 on Si Surface Upon High Current Pulsed Ni Ion Implantation