Abstract:Based on several extended formulas to determine all frequency- and temperature-dependent distributed parameters of on-chip coupled asymmetrical and symmetrical interconnects on silicon substrates, the electromagnetic-thermal characteristics of interconnects were investigated in detail, including 1) wideband series impedances and shunt conductances, 2) conductive and dielectric attenuation constants of even(c) and odd (pi)-mode, 3) pulse waveform distortion and crosstalk, and 4) average power handling capability (APHC). In these investigations, a set of modified formulas were proposed to determine the mutual conductance and capacitance of asymmetrical configuration. Appropriate thermal models were employed to evaluate the rise in temperature of metal interconnects, where the lateral heat dissipation was taken into account for different spacings between two interconnects. Parametric calculations were performed to capture the hybrid effects of all geometric and physical parameters of metal interconnects, such as line thickness, line conductivity, and silicon conductivity. All numerical examples are believed to be useful in the design of (a)symmetrical interconnects for digital and radio frequency circuits.

An Effective Capacitance Model for 28-Nm and Beyond Copper Interconnect

A New Model Library Approach to Extract VLSI Interconnect Capacitance

Modeling and Characterization of On‐Chip Interconnects

An Equivalent Circuit Model with Current Return Path Effects for On-Chip Interconnect Up to 80 Ghz

Capacitance Extraction of Three-Dimensional Interconnects Using Element-By-Element Finite Element Method (Ebe-Fem) and Preconditioned Conjugate Gradient (pcg) Technique

Transfer Functions of On-Chip Global Interconnects Based on Distributed RLCG Interconnects Model

Capacitance extraction of high-density 3D interconnects using finite element method

Considerations and Optimization of Measurement Accuracy of Capacitance in Nano-Scale Cmos Technology

Electromagnetic-Thermal Characterization Of On On-Chip Coupled (A)Symmetrical Interconnects

A New Capacitance-to-Frequency Converter for On-Chip Capacitance Measurement and Calibration in CMOS Technology

Wideband lumped element model for on-chip (a)symmetrical coupled interconnects on lossy silicon substrate

Experimental Characterization of On-Chip Inductor and Capacitor Interconnect: Part I. Series Case

Field-Based Parasitic Capacitance Models for 2d and 3d Sub-45-Nm Interconnect

Equivalent Circuit Model of On-Wafer Interconnects for Cmos Rfics

Accurate Modeling of the Capacitance of Through-Silicon Via Considering Minority Carrier Effects

Interconnect Capacitance Characterization Based on Charge Based Capacitance Measurement (CBCM) Technique for DFM Applications

Analytical Model of the Coupling Capacitance Between Cylindrical Through Silicon Via and Horizontal Interconnect in 3D IC.

A New Closed-Form Expression For Capacitive Coupling Of Lossy Substrate

Capacitive coupling analysis of TSV array in 3D packaging

Analytical Gate Fringe Capacitance Model for Nanoscale MOSFET with Layout Dependent Effect and Process Variations

A Charge-Based Intrinsic Capacitance Model For Thin-Film Soi Short-Channel Mosfet