Abstract:To address the need for direct extraction of the capacitance of a chip, a capacitance measurement array (CMA) has been developed. The operation of the CMA is based on the charge-based capacitance measurement (CBCM) technique. The CMA chip consists of 144 CBCM array units (CAU) and each CAU is designed to measure eight individual capacitors. Element selection and precise measurement are achieved using three-stage transmission gates with four address lines, to ensure a measurement accuracy for capacitor of 1 fF. Different components of the capacitance measurement are addressed and the parameters of CAU are varied to determine the individual influence of these factors. Different physical capacitor shapes are examined to show the capacitance variation as a result of changes to the horizontal and vertical dimensions. MOS transistors with different channel widths are used to illustrate the driving capability influence. The chip is fabricated by a 180 nm CMOS process with six metallic interconnect layers. Based on the results of capacitance array measurement, the capacitance variation in the chip can also be determined. The full address capacitance is measured and the sample data are decomposed into systematic and random variation components using a third-order polynomial fitting for the chip.

Interconnect Capacitance Characterization Based on Charge Based Capacitance Measurement (CBCM) Technique for DFM Applications

A New Capacitance-to-Frequency Converter for On-Chip Capacitance Measurement and Calibration in CMOS Technology

Considerations and Optimization of Measurement Accuracy of Capacitance in Nano-Scale Cmos Technology

A New On-chip Signal Generator for Charge-Based Capacitance Measurement Circuit

Capacitance Extraction of Three-Dimensional Interconnects Using Element-By-Element Finite Element Method (Ebe-Fem) and Preconditioned Conjugate Gradient (pcg) Technique

Capacitance extraction of high-density 3D interconnects using finite element method

Modeling and Characterization of On‐Chip Interconnects

Wafer-Area-Saving Test Structures and Measurement Method for the Characterization of Interconnect Resistance and Capacitance in Nanometer Technologies

Experimental Characterization of On-Chip Inductor and Capacitor Interconnect: Part II. Shunt Case

Electromagnetic-Thermal Characterization Of On On-Chip Coupled (A)Symmetrical Interconnects

Capacitance extraction of on-chip circular stacked inductors

Electro-Thermo-Mechanical Investigation On Multi-Level Interconnects In The Presence Of An Esd Pulse

Analysis of Conductor Loss in Interdigital Capacitor Based Measurement of Dielectric Constant of Ferroelectric Thin Film

Analysis and Characterization of Capacitance Variation Using Capacitance Measurement Array

Finite-difference Time-Domain Macromodel for Simulation of Electromagnetic Interference at High-Speed Interconnects

All Regimes Parasitic Capacitances Extraction Using a Multi-Channel CBCM Technique

Analysis and Design of the Interposer PDN With Optimal Arrangement of Decoupling Capacitors

Study on Extraction of Capacitance Parameters of Three Dimensional Interconnect Structures Based on Finite Element Method

Analysis of Smt Decoupling Capacitor Placement in Electronic Packages Using Hybrid Modeling Method

Improved Pre-Characterization Method for the Random Walk Based Capacitance Extraction of Multi-Dielectric VLSI Interconnects

Field-Based Parasitic Capacitance Models for 2d and 3d Sub-45-Nm Interconnect