Surface morphology and light trapping properties of textured ZnO films

Qian Huang

2013-01-01

Abstract:Light trapping technique plays an important role in the high-performance thin film solar cells.In the present study,highly textured ZnO:Al(AZO) films are prepared by medium frequency impulsed magnetron sputtering and wet etching technology which are influenced by film thickness and etching time.The high-quality textured AZO surface is formed by wet etching after the films are deposited by magnetron sputtering technology.The effects of film thickness and etching-time on the textured structure and light-trapping characteristics are investigated.AZO films with different thicknesses are obtained by changing sputtering time,Precise etching time control leads to different textured structure with various light trapping properties.This textured surface morphology leads to a high haze factor which provides high light trapping efficiency.In addition,the electrical properties of AZO films are also enhanced with higher carrier concentration and mobility as thickness increases.Layers with outstanding electrical(resistivity less than 3×10-4 Ω·cm),optical(average total transmittance higher than 81% from 400 nm to 1 100 nm),haze(84.3% and 73.8% at 500 nm and 750 nm respectively) and morphological(RMS higher than 143 nm,after a 180 s etching process) properties have been obtained,satisfying the demands of photoelectric property of front contact in thin film silicon solar cells and illustrating a good potential application in mass production for large area expansibility.