Enhancement of the Light Trapping by Double-Layered Surface Texture of ITO/AZO and AZO/AZO Transparent Conductive Films

Q. J. Jiang,J. G. Lu,Y. L. Yuan,H. Cai,J. Zhang,N. Deng,Z. Z. Ye

DOI: https://doi.org/10.1016/j.matlet.2014.02.074

IF: 3

2014-01-01

Materials Letters

Abstract:Double-layered surface textures of ITO/AZO (In2O3:Sn/ZnO:Al) and AZO/AZO transparent conductive films are conducted with a process of deposition, first-etching, re-deposition and re-etching. Light trapping ability can be greatly reinforced by the induced double broad feature distributions. For the re-etching process, stronger etching pits with 400–600nm feature sizes and ~68nm Root Mean Square (RMS) roughness are obtained in AZO/AZO films compared to that of the first-etching samples. The use of Fe(III) catalyst can greatly increase the etching rate. Diffuse transmittance with the largest value (56.97%) is observed for the double-layered AZO–HCl/AZO–HCl+FeCl3 sample due to the formation of crater-like morphology in the mezzanine and the surface of the films. The double-textured AZO samples exhibit higher haze values (50.73% and 55.50%) at 550nm, corresponding to the AZO/AZO samples using HCl+FeCl3 or HCl alternately. For ITO related samples, the resistivity keeps the order of 10−4Ωcm after the re-deposition. While, for AZO/AZO films, a slight increment of resistivity and carrier concentration is observed due to the chemical etching. These double-textured structures imply that the films have potential application in thin film silicon (TFS) solar cells for light trapping.