Tailoring the Morphology, Optical and Electrical Properties of DC-sputtered ZnO:Al Films by Post Thermal and Plasma Treatments

Q. J. Jiang,J. G. Lu,Y. L. Yuan,L. W. Sun,X. Wang,Z. Wen,Z. Z. Ye,D. Xiao,H. Z. Ge,Y. Zhao
DOI: https://doi.org/10.1016/j.matlet.2013.05.002
IF: 3
2013-01-01
Materials Letters
Abstract:Post thermal and plasma treatments are used to improve the morphology, optical and electrical properties of ZnO:Al (AZO) films prepared by DC-sputtering at room temperature. H-plasma treated sample exhibits the biggest surface roughness (Root Mean Square, RMS) of 6nm in all the samples. All the films show high transmittance above 90% in 400–800nm visible range. The ∼0.20eV blue-shift of the band gap is observed both in H2 annealed and H-plasma treated samples due to the defect and grain boundary passivation by hydrogen introduction. The improvement of the electrical properties is obvious except for 500°C O2 annealed sample (ρ=8.96×10−2Ωcm, μ=5.50cm2V−1S−1, and n=1.26×1019cm−3) because of the extra oxygen substitution for vacancy oxygen (Vo) and the formation of oxides. The lowest resistivity (2.94×10−3Ωcm) and highest mobility (12.00cm2V−1S−1) are obtained after H-plasma treatment. The significant increment of the carrier concentration indicates that hydrogen atoms have been injected to the lattice during H-plasma processing. Such good textured surface morphology and transparent conductive properties suggest that AZO films have potential possibilities in thin film silicon (TFS) solar cell for light trapping.
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