Reversible resistance switching properties in Ti-doped polycrystalline Ta 2 O 5 thin films

Xiliang He,Xiaomin Li,Xiangdong Gao,Weidong Yu,Rui Yang,Xinjun Liu,Xun Cao
DOI: https://doi.org/10.1007/s00339-012-6868-8
2012-01-01
Applied Physics A: Materials Science and Processing
Abstract:Unipolar reversible resistance switching effects were found in 5 at% Ti-doped polycrystalline Ta 2 O 5 films with the device structure of Pt/Ti–Ta 2 O 5 /Pt. Results suggest that the recovery/rupture of the conductive filaments which are involved in the participation of oxygen vacancies and electrons leads to the resistance switching process. Ti-doped Ta 2 O 5 thin films possess higher resistance whether in low-resistance state or high-resistance state and higher resistance switching ratio than Ta 2 O 5 thin films, where Ti addition plays an important role in the resistance switching process by suppressing the migration of oxygen vacancies via forming an electrically inactive Ti/O–vacancy complex. Excellent retention properties of the high and low resistances under constant stress of applied voltage were obtained.
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