Improving HfO 2 -Based Resistive Switching Devices by Inserting a TaO x Thin Film via Engineered In Situ Oxidation
Tao Wang,Stefano Brivio,Elena Cianci,Claudia Wiemer,Michele Perego,Sabina Spiga,Mario Lanza
DOI: https://doi.org/10.1021/acsami.2c03364
IF: 9.5
2022-05-18
ACS Applied Materials & Interfaces
Abstract:Resistive switching (RS) devices with binary and analogue operation are expected to play a key role in the hardware implementation of artificial neural networks. However, state of the art RS devices based on binary oxides (e.g., HfO<sub>2</sub>) still do not exhibit enough competitive performance. In particular, variability and yield still need to be improved to fit industrial requirements. In this study, we fabricate RS devices based on a TaO<sub><i>x</i></sub>/HfO<sub>2</sub> bilayer stack, using a novel methodology that consists of the in situ oxidation of a Ta film inside the atomic layer deposition (ALD) chamber in which the HfO<sub>2</sub> film is deposited. By means of X-ray reflectivity (XRR) and time-of-flight secondary ion mass spectrometry (ToF-SIMS), we realized that the TaO<sub><i>x</i></sub> film shows a substoichiometric structure, and that the TaO<sub><i>x</i></sub>/HfO<sub>2</sub> bilayer stack holds a well-layered structure. An exhaustive electrical characterization of the TaO<sub><i>x</i></sub>/HfO<sub>2</sub>-based RS devices shows improved switching performance compared to the single-layer HfO<sub>2</sub> counterparts. The main advantages are higher forming yield, self-compliant switching, lower switching variability, enhanced reliability, and better synaptic plasticity.
materials science, multidisciplinary,nanoscience & nanotechnology