PO 2 Dependant Resistance Switch Effect in Highly Epitaxial (laba)co2o5+δ Thin Films

Jian Liu,Gregory Collins,Ming Liu,C. L. Chen,Jiechao Jiang,Efsftathios I. Meletis,Qingyu Zhang,Chuang Dong
DOI: https://doi.org/10.1063/1.3484964
IF: 4
2010-01-01
Applied Physics Letters
Abstract:Giant resistance switching behavior in mixed conductive (LaBa)Co2O5+δ epitaxial thin film were discovered in high temperature and reducing environments during the reduction and reoxidation process. A reproducible resistance response of over 99% was achieved in the films during a change of 4% H2/96% N2 to oxygen at temperature range of 400–780 °C. The results indicate that at, low oxygen partial pressure, the extension of oxygen deficiency is an essential factor to the high temperature physical properties of (LaBa)Co2O5+δ and demonstrates its potential application as a chemical sensor device for reducing environments at high temperature.
What problem does this paper attempt to address?