Po2 Dependant Resistance Switch Effect In Highly Epitaxial (Laba)Co2o5+Delta Thin Films

Gregory Collins
DOI: https://doi.org/10.1063/1.3484964
IF: 4
2010-01-01
Applied Physics Letters
Abstract:Giant resistance switching behavior in mixed conductive (LaBa)Co2O5+delta epitaxial thin film were discovered in high temperature and reducing environments during the reduction and reoxidation process. A reproducible resistance response of over 99% was achieved in the films during a change of 4% H-2/96% N-2 to oxygen at temperature range of 400-780 degrees C. The results indicate that at, low oxygen partial pressure, the extension of oxygen deficiency is an essential factor to the high temperature physical properties of (LaBa)Co2O5+delta and demonstrates its potential application as a chemical sensor device for reducing environments at high temperature. (C) 2010 American Institute of Physics. [doi:10.1063/1.3484964]
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