Effect of Thickness of Metal Electrode on the Performance of SiNx-based Resistive Switching Devices
Zhen Fei Zhang,Hai Xia Gao,Mei Yang,Peng Fei Jiang,Xiao Hua Ma,Yin Tang Yang
DOI: https://doi.org/10.1063/1.5062597
IF: 4
2019-01-01
Applied Physics Letters
Abstract:This letter studies the effect of the thickness of the top electrode on the performance of a SiNx resistive switching layer. We fabricated six devices with Ta electrodes of different thickness values (8 nm, 10nm, 15 nm, 30nm, 40 nm, and 50nm) in a Ta/SiNx/Pt structure and then systematically investigated their performance. The high electrode thickness devices show stable and self-compliant bipolar resistive switching characteristics. In contrast, low electrode thickness devices display unstable RS behavior and have a high set voltage. In the low resistance state region, the Ta/SiNx/Pt devices obey Ohmic conduction, while in the high resistance state region, the conduction mechanism is Schottky emission. To explain the different RS behavior in the two device types, a nitrogen-ion-based model has been presented. According to this model, the device with a thicker top electrode has a stronger nitrogen accommodation ability, while the migration of nitrogen ions and silicon dangling bonds dominates conductive behavior. Published under license by AIP Publishing.