Abstract:The resistive switching interface is promising for building random access memory devices with electroforming-free characteristics, rectification functionality and highly reproducible resistive switching performance. The electronic structures of the resistive switching interface are important not only from a fundamental point of view, but also from the fascinating perspective of interface engineering for high performance devices. However, the electronic properties of typical resistive switching interfacial structures at an atomic level are less well understood, compared to those of bulky resistive switching structures. In this work, we study the electronic structures of two typical resistive switching interfacial structures, TiO 2 /Ti 4 O 7 and Ta 2 O 5 /TaO 2 , using the screened exchange (sX-LDA) functional. We uncover that the system Fermi energies of both interfaces are just above the conduction band edge of the corresponding stoichiometric oxides. According to the defect charge transition levels, the oxygen vacancy is stabilized at the −2 charged state in Ta 2 O 5 and TiO 2 where the switching takes place. However, it is desirable for the +2 charged oxygen vacancy to be stabilized to achieve controlled resistive switching under the electrical field. We propose to introduce interfacial dopants to shift the system Fermi energies downward so that the +2 charged oxygen vacancy can be stable. Several dipole models are presented to account for the ability of the Fermi level to shift due to the interfacial dopants. These methods are readily applicable to interface engineering for high performance devices.

Resistive Switching Characteristics of Tantalum Oxide Thin Film and Titanium Oxide Nanoparticles Hybrid Structure

Resistive Switching Characteristics in TiO2/LaAlO3Heterostructures Sandwiched in Pt Electrodes

Bipolar resistive switching behavior and conduction mechanisms of composite nanostructured TiO2/ZrO2 thin film

Resistive Switching Characteristics In Tio2/Laalo3 Heterostructures Sandwiched In Pt Electrodes

Improving HfO 2 -Based Resistive Switching Devices by Inserting a TaO x Thin Film via Engineered In Situ Oxidation

Controllable Resistive Switching in Au/Nb:Srtio3 Microscopic Schottky Junctions

Observing Resistive Switching Behaviors in Single Ta2O5 Nanotube-Based Memristive Devices

Effect of TaOx Thickness on the Resistive Switching of Ta/Pr0.7Ca0.3MnO3/Pt Films

Controlling resistive switching behavior in the solution processed SiO2-x device by the insertion of TiO2 nanoparticles

Nanostructures Stacked on Hafnium Oxide Films Interfacing Graphene and Silicon Oxide Layers as Resistive Switching Media

Resistive switching phenomena in TiOx nanoparticle layers for memory applications

Bipolar resistive switching in amorphous titanium oxide thin films

Controllable volatile to nonvolatile resistive switching conversion and conductive filaments engineering in Cu / ZrO 2 / Pt devices

Electrical Resistance Switching in Ti Added Amorphous Siox

Resistive Switching Behaviour of A Tantalum Oxide Nanolayer Fabricated by Plasma Oxidation

Understanding the Intermediate Initial State in Tio2-Delta/La2/3sr1/3mno3 Stack-Based Bipolar Resistive Switching Devices

Composition Dependence of Unipolar Resistance Switching in TaOx Thin Films

Identifying and Engineering the Electronic Properties of the Resistive Switching Interface

Resistive switching and synaptic learning performance of a TiO2 thin film based device prepared by sol–gel and spin coating techniques

Bipolar resistive switching based on SrTiO3/YBa 2Cu3O7 epi-layers

A Dual-Functional Ta/TaOx/Ru Device with Both Nonlinear Selector and Resistive Switching Behaviors