Structural characteristics and resistive switching properties of thermally prepared TiO2 thin films

Xun Cao,Xiaomin Li,Weidong Yu,Yiwen Zhang,Rui Yang,Xinjun Liu,Jingfang Kong,Wenzhong Shen
DOI: https://doi.org/10.1016/j.jallcom.2009.06.175
IF: 6.2
2009-01-01
Journal of Alloys and Compounds
Abstract:Polycrystalline TiO2 thin films were formed on Pt(111)/Ti/SiO2/Si by thermal oxidation of Ti films with temperatures ranging from 600°C to 800°C. Results of Raman spectra testing indicate that the structure of the oxidized TiO2 films is rutile phase. The resistance switching behaviors (RSB) have been confirmed in Pt/TiO2/Pt structures. A stable RSB with a narrow dispersion of the resistance states and switching voltages was observed in the sample fabricated with the oxidation temperature of 600°C. The resistance ratios of high resistance states to low resistance states are larger than 103 with the set and reset voltage as low as 2.5V and 0.6V, respectively.
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