Excellent resistive switching property and physical mechanism of amorphous TiO 2 thin films fabricated by a low-temperature photochemical solution deposition method

lilan zou,wei hu,wei xie,ruqi chen,ni qin,baojun li,dinghua bao

DOI: https://doi.org/10.1016/j.apsusc.2014.05.139

IF: 6.7

2014-01-01

Applied Surface Science

Abstract:•High-performance resistive switching Pt/TiO2/Pt memory cells were obtained.•Amorphous TiO2 layer was prepared by low-temperature photochemical deposition.•Pt/TiO2/Pt memory cells exhibited excellent resistive switching parameters.•UV irradiation led to the formation of enhanced metal-oxide bonds.•Resistive switching corresponded to the formation/rupture of conductive filaments.