Abstract:Three kinds of ex situ low-temperature AlN (LT-AlN) templates grown on Si substrates by pulsed laser deposition (PLD) are employed to grow GaN epitaxial films by metal organic chemical vapor deposition (MOCVD). The single-crystalline ex situ LT-AlN template with smooth surface shows the greatest advantage to achieve high-quality GaN epitaxial films. It can effectively promote the lateral growth of high-temperature AlN layer to obtain coalesced and smooth surface, and therefore reduce the GaN nucleation energy barrier to facilitate GaN nucleation process. The as-grown truncated GaN nuclei with large sizes and low density are favorable for the two-dimensional growth of GaN. The ∼1.5 μm-thick GaN epitaxial film grown on this ex situ LT-AlN template shows a flat surface and the best crystalline quality with the minimum full-width at half maximums (FWHMs) of GaN(0002) and GaN(10–12) X-ray rocking curves (XRCs) as 504 and 566 arcsec, respectively, and the minimum FWHM of near band emission peak as 20.62 nm. According to the XRC results, compared with the GaN film grown without ex situ LT-AlN templates, the screw-type threading dislocations (TDs) density, edge- and mixed-type TDs density in as-grown GaN film are greatly reduced by 20% and 49%, respectively, proving the superiority of ex situ LT-AlN template. This work is instructional for the growth of high-quality nitride films by combination methods, and significant for achieving high-performance GaN-based devices.

Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Ga-free AlInN films growth by close-coupled showerhead metalorganic chemical vapor deposition

Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures

Material Properties of Mocvd Grown Algan Layers Influenced by Indium-Incorporation

Al Incorporation, Structural and Optical Properties of AlxGa1−xN (0.13⩽x⩽0.8) Alloys Grown by MOCVD

Relationship Between the Growth Rate and Al Incorporation of AlGaN by Metalorganic Chemical Vapor Deposition

Effects and Mechanisms of in Surfactant on High Al-content AlGaN Grown by Plasma-Assisted Molecular Beam Epitaxy.

Linear Dependency of Al-mole Fraction with Group-Iii Precursor Flows in AlxGa1−xN (0≤x≤1) Deposition by LP OMVPE

Growth mechanisms of GaN epitaxial films grown on ex situ low-temperature AlN templates on Si substrates by the combination methods of PLD and MOCVD

Improved Surface Morphology and Reduced V-Pits Density of Lattice-Matched Alinn Films Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition

High-resistivity Unintentionally Carbon-Doped GaN Layers with Nitrogen As Nucleation Layer Carrier Gas Grown by Metal-Organic Chemical Vapor Deposition

Plasma Assisted Molecular Beam Epitaxy Growth Mechanism of AlGaN Epilayers and Strain Relaxation on AlN Templates

Structural and Optical Properties of Al 1-X in X N Epilayers on GaN Template Grown by Metalorganic Chemical Vapor Deposition

Growth of In‐rich and Ga‐rich InGaN Alloys by MOCVD and Fabrication of InGaN‐based Photoelectrodes

Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE

Incorporation Behaviors of in and Ga in the Two-Heater Movpe Growth of Ingan Films

Characteristics of High Al Content AlxGa1−xN Grown by Metalorganic Chemical Vapor Deposition

Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition

Growth mechanism of vertical compositional inhomogeneities in AlInN films

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition